High speed interconnect

Abstract

In some embodiments a high speed interconnect includes a layer of FR4 material, a trench in the layer of FR4 material, and a pair of transmission lines located near the trench. The trench is filled with a homogenous material. Other embodiments are described and claimed.

1 . A high speed interconnect comprising: 
 a layer of FR4 material;    a trench in the layer of FR4 material, wherein the trench is filled with a homogenous material;    a pair of transmission lines located near the trench.    
     
     
         2 . The high speed interconnect of  claim 1 , wherein the homogenous material is at least one of an epoxy, Teflon, nylon, alumina, and ceramic.  
     
     
         3 . The high speed interconnect of  claim 1 , wherein the homogenous material is a material that is less lossy than FR4.  
     
     
         4 . The high speed interconnect of  claim 1 , wherein the homogenous material is a low loss material.  
     
     
         5 . The high speed interconnect of  claim 1 , wherein the pair of transmission lines is a differential pair of transmission lines.  
     
     
         6 . The high speed interconnect of  claim 1 , wherein the high speed interconnect is a bus.  
     
     
         7 . The high speed interconnect of  claim 6 , wherein the bus is a memory bus.  
     
     
         8 . The high speed interconnect of  claim 6 , wherein the bus is a front side bus.  
     
     
         9 . The high speed interconnect of  claim 1 , wherein the pair of transmission lines is located over the trench.  
     
     
         10 . A method of forming a high speed interconnect comprising: 
 creating a trench in a layer of FR4 material;    inserting a homogenous material into the trench; and    forming a pair of transmission lines near the trench.    
     
     
         11 . The method of  claim 10 , wherein the trench in the layer of FR4 material is created by milling.  
     
     
         12 . The method of  claim 10 , wherein the trench in the layer of FR4 material is created by laser etching.  
     
     
         13 . The method of  claim 10 , wherein the pair of transmission lines are formed by etching.  
     
     
         14 . The method of  claim 10 , wherein the homogenous material is at least one of an epoxy, Teflon, nylon, alumina, and ceramic.  
     
     
         15 . The method of  claim 10 , wherein the homogenous material is a material that is less lossy than FR4.  
     
     
         16 . The method of  claim 10 , wherein the homogenous material is a low loss material.  
     
     
         17 . The method of  claim 10 , wherein the pair of transmission lines is a differential pair of transmission lines.  
     
     
         18 . The method of  claim 10 , wherein the high speed interconnect is a bus.  
     
     
         19 . The method of  claim 10 , wherein the pair of transmission lines is formed over the trench.  
     
     
         20 . A system comprising: 
 a first device;    a second device; and    a high speed interconnect to propagate a signal between the first device and the second device, the high speed interconnect including: 
 a layer of FR4 material;  
 a trench in the layer of FR4 material, wherein the trench is filled with a homogenous material;  
 a pair of transmission lines located near the trench.  
   
     
     
         21 . The system of  claim 20 , wherein the first device is a processor and the second device is a chipset.  
     
     
         22 . The system of  claim 20 , wherein the first device is a chipset and the second device is a memory.  
     
     
         23 . The system of  claim 20 , wherein the high speed interconnect is included in a board.  
     
     
         24 . The system of  claim 20 , wherein the first device and the second device are on the board.  
     
     
         25 . The system of  claim 20 , wherein the homogenous material is at least one of an epoxy, Teflon, nylon, alumina, and ceramic.  
     
     
         26 . The system of  claim 20 , wherein the homogenous material is a material that is less lossy than FR4.  
     
     
         27 . The system of  claim 20 , wherein the homogenous material is a low loss material.  
     
     
         28 . The system of  claim 20 , wherein the pair of transmission lines is a differential pair of transmission lines.  
     
     
         29 . The system of  claim 20 , wherein the high speed interconnect is a bus.  
     
     
         30 . The system of  claim 29 , wherein the bus is a memory bus.  
     
     
         31 . The system of  claim 29 , wherein the bus is a front side bus.  
     
     
         32 . The system of  claim 20 , wherein the pair of transmission lines is located over the trench.