Method of manufacturing trench structure for device

Abstract

A porous low-k film, a sacrificial film that can be dissolved in a pure water, an antireflection film and a resist film are successively formed on a dielectric film on a wafer and subsequently exposing the resist film to light in a prescribed pattern and developing the resist film so as to form a prescribed circuit pattern in the resist film. Then, the wafer W is etched so as to form a via hole in the porous low-k film, followed by processing the wafer with a hydrogen peroxide solution so as to denature the resist film. Further, the sacrificial film is dissolved in a pure water so as to strip the resist film and the antireflection film from the water. As a result, a via hole excellent in the accuracy of the shape is formed without doing damage to the dielectric film.

1 - 5 . (canceled)  
   
   
       6 . The method of manufacturing a trench structure for a device, including a trench for the interconnection, comprising the steps of: 
 forming a dielectric film on a substrate;    forming a sacrificial film on the dielectric film;    forming an etching mask having a prescribed pattern on the sacrificial film;    etching the substrate thereby forming a via hole in the dielectric film; and    treating the substrate with a liquid capable of dissolving the sacrificial film so as to dissolve the sacrificial film, thereby stripping the etching mask from the substrate,    wherein the sacrificial film is a SiO 2  series thin film, and the liquid is selected from the group consisting of a diluted hydrofluoric acid, an ammonium fluoride series chemical liquid, an ammonium phosphate series chemical liquid, an ammonium oxalate series chemical solution and an ammonium acetate series chemical solution.    
   
   
       7 - 13 . (canceled)  
   
   
       14 . The method of manufacturing a trench structure for a device, including a trench for the interconnection, comprising the steps of: 
 forming a dielectric film on a substrate;    forming a sacrificial film on the dielectric film;    forming an antireflection film on the sacrificial film;    forming a resist film on the antireflection film;    exposing the resist film to light in a prescribed pattern, followed by developing the resist film thereby forming a prescribed circuit pattern in the resist film;    etching the substrate to form a via hole in the dielectric film; and    treating the substrate with a liquid capable of dissolving the sacrificial film so as to dissolve the sacrificial film, thereby stripping the antireflection film and the resist film from the substrate,    wherein the sacrificial film is a SiO 2  series thin film, and the liquid is selected from the group consisting of a diluted hydrofluoric acid, an ammonium fluoride series chemical solution, an ammonium phosphate series chemical solution, an ammonium oxalate series chemical solution and an ammonium acetate series chemical solution.    
   
   
       15 - 18 . (canceled)