Semiconductor device and method of manufacturing the same

Abstract

There is provided a method of manufacturing a semiconductor device in which interconnect capacitance is restrained. The semiconductor device 200 comprises a semiconductor substrate; a second interconnect insulating film 216 constituted of a ladder-type hydrogen siloxane formed on the semiconductor substrate; a second protection film 217 provided on the second interconnect insulating film 216 ; and an upper interconnect 270 formed in the second interconnect insulating film 216 and the second protection film 217 . The second interconnect insulating film 216 is constituted of for example an L-Ox™ (trademark) film, and the second protection film 217 is constituted of for example a silicon oxide film.

1 . A method of manufacturing a semiconductor device comprising: 
 forming a low dielectric constant film constituted essentially of a ladder-type hydrogen siloxane on a semiconductor substrate;    forming a protection film on said low dielectric constant film;    forming a metal interconnect in said low dielectric constant film and said protection film; and    polishing said metal interconnect with said protection film provided on said low dielectric constant film.    
   
   
       2 . The method as recited in claim  9 , further comprising: 
 forming an interlayer insulating film on said protection film after polishing said metal interconnect;    polishing and planarizing said interlayer insulating film; and    repeating the respective steps to thereby form a multilayer interconnect structure.