US2007166205A1PendingUtilityA1

Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases

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Assignee: HOLST MARKPriority: Dec 31, 1996Filed: Oct 24, 2006Published: Jul 19, 2007
Est. expiryDec 31, 2016(expired)· nominal 20-yr term from priority
B01D 47/06Y02C20/30B01D 2258/0216B01D 53/1456B01D 53/68C23C 16/4412B01D 53/14
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Claims

Abstract

An effluent gas stream treatment system for treatment of gaseous effluents such as waste gases from semiconductor manufacturing operations. The effluent gas stream treatment system comprises a pre-oxidation treatment unit, which may for example comprise a scrubber, an oxidation unit such an electrothermal oxidizer, and a post-oxidation treatment unit, such as a wet or dry scrubber. The effluent gas stream treatment system of the invention may utilize an integrated oxidizer, quench and wet scrubber assembly, for abatement of hazardous or otherwise undesired components from the effluent gas stream. Gas or liquid shrouding of gas streams in the treatment system may be provided by high efficiency inlet structures.

Claims

exact text as granted — not AI-modified
1 - 20 . (canceled)  
   
   
       21 . A method of abating hazardous chemicals in an effluent gas stream comprising: 
 introducing the effluent gas stream into a thermal reaction chamber having an interior wall; and    exposing the interior wall of the thermal reaction chamber to a secondary fluid flow;    wherein the secondary fluid flow reduces deposition of particulates within the effluent gas stream on the interior wall of the thermal reaction chamber.    
   
   
       22 . The method of  claim 21 , wherein the exposing comprises introducing the secondary fluid flow into the thermal reaction chamber proximate to the interior wall.  
   
   
       23 . The method of  claim 22 , wherein the secondary fluid flow comprises nitrogen gas.  
   
   
       24 . The method of  claim 22 , further comprising: 
 scrubbing the effluent gas stream upstream from the thermal reaction chamber.    
   
   
       25 . The method of  claim 22 , further comprising: 
 scrubbing the effluent gas stream downstream from the thermal reaction chamber.    
   
   
       26 . A method of treating an effluent gas stream from one or more semiconductor manufacturing process tools, comprising the steps of: 
 introducing the effluent gas stream into an oxidizer unit including an oxidation chamber having an interior wall; and    promoting fluid flow proximate to the interior wall of the oxidation chamber;    wherein the fluid flow prevents accumulation of particulates on the interior wall of the oxidation chamber derived from the effluent gas stream.    
   
   
       27 . The method of  claim 26 , wherein the promoting comprises introducing an additional gas into the oxidation chamber proximate to the interior wall.  
   
   
       28 . The method of  claim 27 , wherein the additional gas comprises nitrogen.  
   
   
       29 . The method of  claim 27 , further comprising: 
 scrubbing the effluent gas stream upstream from the oxidation chamber.    
   
   
       30 . The method of  claim 27 , further comprising: 
 scrubbing the effluent gas stream downstream from the oxidation chamber.    
   
   
       31 . A system for abating hazardous chemicals in an effluent gas stream comprising: 
 a pre-scrubber unit adapted to remove scrubbable components from the effluent gas stream;    a thermal reaction chamber coupled downstream from the pre-scrubber unit including an inlet to receive the effluent gas stream and an interior wall; and    a gas delivery mechanism adapted to expose the interior wall of the thermal reaction chamber to a secondary fluid flow;    wherein the secondary fluid flow reduces deposition of particulates within the effluent gas stream on the interior wall of the thermal reaction chamber.    
   
   
       32 . The system of  claim 31 , wherein the gas delivery mechanism comprises a mechanism for sheathing the interior wall with a sheathing gas.  
   
   
       33 . The system of  claim 32 , wherein the sheathing gas comprises nitrogen.  
   
   
       34 . The system of  claim 32 , further comprising: 
 a post-scrubber unit coupled downstream from the thermal reaction chamber adapted to remove additional scrubbable components from the effluent gas stream.    
   
   
       35 . The system of  claim 31 , wherein the thermal reaction chamber is tubular.  
   
   
       36 . A system for abating hazardous chemicals in an effluent gas stream comprising: 
 a thermal reaction chamber including an inlet to receive the effluent gas stream and an interior wall;    a gas delivery mechanism adapted to expose the interior wall of the thermal reaction chamber to a secondary fluid flow; and    a post-scrubber unit coupled downstream from the thermal reaction chamber adapted to remove scrubbable components from the effluent gas stream;    wherein the secondary fluid flow reduces deposition of particulates within the effluent gas stream on the interior wall of the thermal reaction chamber.    
   
   
       37 . The system of  claim 36 , wherein the gas delivery mechanism comprises a mechanism for sheathing the interior wall with a sheathing gas.  
   
   
       38 . The system of  claim 37 , wherein the sheathing gas comprises nitrogen.  
   
   
       39 . The system of  claim 37 , further comprising: 
 a pre-scrubber unit coupled upstream from the thermal reaction chamber adapted to remove scrubbable components from the effluent gas stream prior to entry of the effluent gas stream into the thermal reaction chamber.    
   
   
       40 . The system of  claim 36 , wherein the thermal reaction chamber is tubular.

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