Dual mode ion source for ion implantation

Abstract

An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B 2 H x + , B 5 H x + , B 10 H x + , B 18 H x + , P 4 + or As 4 + or monomer ions, such as Ge + , In + , Sb + , B + , As + , and P + , to enable cluster implants and monomer implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.

1 . A universal ion source comprising 
 an ionization :volume for ionizing source gas or vapor;    a cathode assembly for generating a plasma in said ionization volume in a first mode of operation;    an electron gun for generating electrons in a second mode of operation, said electron gun juxtaposed external to said ionization volume and configured to direct electrons into said ionization volume;    a source of gas or vapor; and    means for switching between said first mode of operation and said second mode of operation.