Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method

Abstract

The plasma processing apparatus wherein the means for applying a high frequency voltage, which becomes a voltage waveform in which a positive constant voltage and a negative constant voltage alternate with each other at given cycles, is constituted by a DC power source and a switching circuit (a chopper circuit).

1 . The plasma processing apparatus wherein the means for applying a high frequency voltage, which becomes a voltage waveform in which a positive constant voltage and a negative constant voltage alternate with each other at given cycles, is constituted by a DC power source and a switching circuit (a chopper circuit).  
   
   
       2 . The plasma processing apparatus according to  claim 1 , wherein the means for applying a high frequency voltage, which becomes a voltage waveform in which a positive constant voltage and a negative constant voltage alternate with each other at given cycles, is constituted by a DC power source and a switching circuit (a chopper circuit), which uses as switch elements a thyristor, a GTO (a gate turn-off thyristor), an IGBT (an insulated gate bipolar transistor), a MOSFET and a power transistor.