SiP module with a single sided lid
Abstract
A single-lid flash memory card and methods of manufacturing same are disclosed. The single-sided lid flash memory card may be formed from a semiconductor package having two or more tapered, stepped or otherwise shaped edges capable of securing a single-sided lid thereon. The taper, step or other shape may be fabricated by various methods, including during the molding step or during the singulation step. A semiconductor package having shaped edges may be enclosed within an external lid to form a finished flash memory card. The lid may be applied to a single side of the semiconductor package by various processes, including over-molding, or by pre-forming the lid with interior edges to match the exterior edges of the semiconductor package, and then sliding the lid over the package to form a tight fit therebetween. The shaped edge of the semiconductor package effectively holds the lid securely on the memory card without any adhesives and prevents the lid from dislodging from the semiconductor package.
Claims
exact text as granted — not AI-modified1 . A method forming a semiconductor package from a panel, comprising the steps of:
(a) immersing the panel at least partially in a liquid bath; and (b) singulating the semiconductor package from the panel while the panel is at least partially immersed in the liquid bath.
2 . A method of forming a semiconductor package as recited in claim 1 , wherein said step (b) of singulating the semiconductor package from the panel while the panel is at least partially immersed in the liquid bath comprises the step of cutting the panel with a laser.
3 . A method of forming a semiconductor package as recited in claim 1 , wherein said step (a) of immersing the panel at least partially in a liquid bath comprising the step of immersing the panel so that an upper surface of the panel is approximately at an upper surface the liquid in the liquid bath.
4 . A method of forming a semiconductor package as recited in claim 1 , wherein said step (a) of immersing the panel at least partially in a liquid bath comprising the step of immersing the panel so that an upper surface of the panel is beneath an upper surface the liquid in the liquid bath.
5 . A method of forming a semiconductor package as recited in claim 1 , wherein said step (a) of immersing the panel at least partially in a liquid bath comprising the step of immersing the panel in water.
6 . A method of forming a semiconductor package as recited in claim 1 , wherein said step (a) of immersing the panel at least partially in a liquid bath comprising the step of positioning the panel in a fixture for registering the panel in a desired position.
7 . A method of forming a semiconductor package as recited in claim 1 , wherein said step (a) of immersing the panel at least partially in a liquid bath comprising the step of supporting the panel on one or more support posts.
8 . A method of forming a semiconductor package as recited in claim 7 , wherein said step of supporting the panel on one or more support posts comprises the step of supporting the panel on suction cups on the support posts.
9 . A method of forming a semiconductor package as recited in claim 1 , wherein said step (b) of singulating the semiconductor package from the panel while the panel is at least partially immersed in the liquid bath comprises the step of cutting semiconductor package with straight edges.
10 . A method of forming a semiconductor package as recited in claim 1 , wherein said step (b) of singulating the semiconductor package from the panel while the panel is at least partially immersed in the liquid bath comprises the step of cutting semiconductor package with irregular shaped and/or curvilinear edges.
11 . A method of forming a semiconductor package as recited in claim 1 , further comprising the step (c) of supporting the panel a fixed position within the liquid bath.
12 . A method of forming a semiconductor package as recited in claim 11 , wherein said step (c) of supporting the panel a fixed position within the liquid bath comprising the step of supporting the panel on four contiguous rails.
13 . A method of forming a semiconductor package as recited in claim 11 , wherein said step (c) of supporting the panel a fixed position within the liquid bath comprising the step of supporting the panel at corners of the panel.
14 . A method of forming a semiconductor package as recited in claim 11 , wherein said step (c) of supporting the panel a fixed position within the liquid bath comprising the step of supporting the panel on posts received within registration holes in the panel.
15 . A method of forming a method forming a semiconductor package from a panel, comprising the steps of:
(a) forming an integrated circuit on the panel; (b) encapsulating the integrated circuit and at least one surface of the panel; (c) immersing the panel at least partially in a liquid bath; and (d) singulating the semiconductor package from the panel while the panel is at least partially immersed in the liquid bath.
16 . A method of forming a semiconductor package as recited in claim 15 , further comprising the step of encasing the semiconductor package in at least one lid.
17 . A method of forming a semiconductor package as recited in claim 15 , wherein said step (d) of singulating the semiconductor package from the panel while the panel is at least partially immersed in the liquid bath comprises the step of cutting the panel with a laser.
18 . A method of forming a semiconductor package as recited in claim 15 , wherein said step (c) of immersing the panel at least partially in a liquid bath comprising the step of immersing the panel so that an upper surface of the panel is approximately at an upper surface the liquid in the liquid bath.
19 . A method of forming a semiconductor package as recited in claim 15 , wherein said step (c) of immersing the panel at least partially in a liquid bath comprising the step of immersing the panel so that an upper surface of the panel is beneath an upper surface the liquid in the liquid bath.
20 . A method of forming a semiconductor package as recited in claim 15 , wherein said step (c) of immersing the panel at least partially in a liquid bath comprising the step of immersing the panel in water.
21 . A method of forming a semiconductor package as recited in claim 20 , further comprising the step of adding ice to the liquid bath.
22 . A method of forming a semiconductor package as recited in claim 15 , further comprising the step of adding liquid to the liquid bath to maintain a temperature of the liquid bath.
23 . A method of forming a semiconductor package as recited in claim 15 , further comprising the step of removing liquid from the liquid bath to maintain a temperature of the liquid bath.
24 . A method of forming a semiconductor package as recited in claim 15 , further comprising the step of supporting the panel a fixed position within the liquid bath.
25 . A method forming a flash memory card, comprising the steps of:
(a) forming an integrated circuit on a panel; (b) encapsulating the integrated circuit and at least one surface of the panel; (c) immersing the panel at least partially in a liquid bath; (d) singulating the panel with a laser into at least one semiconductor package while the panel is at least partially immersed in the liquid bath; and (e) encasing the semiconductor package in at least one lid
26 . A method of forming a flash memory as recited in claim 25 , wherein said step (a) of forming an integrated circuit on a panel comprises the step of forming at least one of a flash memory array, S-RAM, DDT, and a controller circuit.
27 . A method of forming a flash memory as recited in claim 25 , wherein the flash memory card is one of a Pico card, xD card, an MMC card, an RS-MMC card, an SD Card, a Compact Flash, a Smart Media Card, a Mini SD Card, a Transflash memory card or a Memory Stick.
28 . A method of forming a flash memory as recited in claim 25 , wherein said step (c) of immersing the panel at least partially in a liquid bath comprising the step of immersing the panel so that an upper surface of the panel is approximately at an upper surface the liquid in the liquid bath.
29 . A method of forming a flash memory as recited in claim 25 , wherein said step (c) of immersing the panel at least partially in a liquid bath comprising the step of immersing the panel so that an upper surface of the panel is beneath an upper surface the liquid in the liquid bath.
30 . A method of forming a flash memory as recited in claim 25 , wherein said step (c) of immersing the panel at least partially in a liquid bath comprising the step of immersing the panel in water.
31 . A method of forming a flash memory as recited in claim 25 , further comprising the step of supporting the panel a fixed position within the liquid bath.
32 . A method of forming a semiconductor package as recited in claim 31 , wherein said step of supporting the panel a fixed position within the liquid bath comprising the step of supporting the panel on four contiguous rails.
33 . A method of forming a semiconductor package as recited in claim 31 , wherein said step of supporting the panel a fixed position within the liquid bath comprising the step of supporting the panel at corners of the panel.
34 . A method of forming a semiconductor package as recited in claim 31 , wherein said step of supporting the panel a fixed position within the liquid bath comprising the step of supporting the panel on posts received within registration holes in the panel.Cited by (0)
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