Method and apparatus to process substrates with megasonic energy

Abstract

A variety of techniques may be employed, alone or in combination, to enhance contact between a processed substrate and applied megasonic energy. In accordance with one embodiment of the new invention, the vibration plate is brought into intimate contact with one surface of the substrate, while cleaning or processing fluid contacts the other. In accordance with an alternative embodiment of the present invention, a reflecting surface may be provided to cause emanated energy to be reflected back into the near field and make it more uniform. In accordance with another alternative embodiment of the present invention, energy may be transferred across a substrate bounded on both sides by liquid with incidence of megasonic energy that is either normal to the substrate surface or within a critical range of incident angles. In yet another embodiment, generated dilatational waves may be converted to surface waves prior to contacting the substrate.

1 - 185 . (canceled)  
     
     
         186 . A method of drying a substrate comprising: 
 positioning a substrate within a processing chamber;    pressurizing the processing chamber by at least one of introducing a gas and a vapor and a processing liquid into the chamber;    wetting at least part of the substrate surface comprising one of submerging, spraying and condensing liquid onto the substrate;    concentrating a surface tension lowering component at a gas-liquid interface;    moving one of the substrate and the processing liquid level relative to one of the substrate and the gas-liquid interface such that a surface tension gradient is created between the liquid comprising a meniscus on the substrate surface and a remaining portion of the processing liquid wherein the surface tension gradient draws liquid from the substrate surface into the bulk processing liquid;    applying radiation to at least one of a part of the substrate and at least one of the processing liquid on the substrate surface;    wherein the pressurizing step occurs one of before, after, and during the radiation applying step; and    wherein the applying radiation step occurs one of before, after, and during the moving step.    
     
     
         187 . The method of  claim 186  wherein a surface tension lowering component is concentrated in the meniscus formed between at least part of the substrate surface and of the processing liquid.  
     
     
         188 . The method of  claim 187  wherein the surface tension lowering component is introduced into the processing chamber as one of a pressurized gas, a pressurized vapor, a liquid spray, a mist, and a dust.  
     
     
         189 . The method of  claim 186  wherein the surface tension of the liquid comprising the meniscus is reduced by the applied radiation.  
     
     
         190 . The method of claim  1  wherein the applied radiation comprises at least one of microwave, UV, IR, RF, and electromagnetic induction.  
     
     
         191 . A method of drying a substrate comprising: 
 positioning a substrate within a processing chamber;    pressurizing the processing chamber by at least one of introducing a gas and a processing liquid into the chamber;    wetting at least part of the substrate surface comprising one of submerging, spraying and condensing liquid onto the substrate;    moving one of the substrate and the liquid level relative to one of the substrate and the gas-liquid interface;    applying radiation to at least one of, a part of the substrate and a meniscus and a liquid film, both the meniscus and the liquid film comprised of at least one component of the processing liquid contacting the substrate surface;    wherein the pressurizing step occurs one of before, after and simultaneously with the applying radiation step; and    wherein the applying radiation step occurs one of before, after and during the moving step.    
     
     
         192 . The method of  claim 191  wherein the applied radiation causes at least one of heating a part of the substrate and at least one of heating and decomposing at least one component of the processing liquid.  
     
     
         193 . The method of  claim 191  wherein a surface tension of the liquid comprising the meniscus is reduced by the applied radiation.  
     
     
         194 . The method of  claim 191  wherein the applied radiation comprises one of microwave, ultraviolet (UV), infrared (IR), radio frequency (RF), and electromagnetic induction.  
     
     
         195 . The method of  claim 191  wherein ultrasonic energy is applied to at least one of the processing chamber, the processing liquid, the substrate, and a substrate support member in contact with the substrate.  
     
     
         196 . A method of drying a substrate comprising: 
 positioning a substrate within a processing chamber;    pressurizing the processing chamber by at least one of introducing a gas and a processing liquid into the chamber;    wetting at least part of the substrate surface comprising one of submerging, spraying and condensing liquid onto the substrate;    applying ultrasonic energy to at least one of part of the substrate and the processing liquid, thereby causing liquid in contact with the substrate to at least one of vaporize and run off.    
     
     
         197 . The method of  claim 196  wherein megasonic energy is applied to at least one of the processing chamber, the processing liquid, the substrate, and a substrate support member in contact with the substrate.  
     
     
         198 . The method of  claim 196  wherein at least one surface of the substrate is in direct contact with an ultrasonic vibration member.  
     
     
         199 . The method of  claim 196  further comprising adjusting the RF frequency driving a transducer assembly to produce an odd multiple of one quarter wavelength of ultrasonic energy approximately equal to the sum of the vibration member thickness and substrate thickness.  
     
     
         200 . The method of  claim 196  wherein a thin liquid layer coats the substrate as a result of one of being sprayed with liquid droplets and gaseous components condensing on the substrate.  
     
     
         201 . A method of drying a substrate comprising: 
 positioning a substrate within a processing chamber;    pressurizing the processing chamber to greater than atmospheric pressure by at least one of introducing a gas, a processing liquid and a rinsing liquid into the chamber;    wetting at least part of the substrate surface comprising one of submerging, spraying and condensing liquid onto the substrate;    moving the substrate relative to the gas-liquid interface; and    applying radiation to heat at least one of a layer of the substrate and a liquid film on at least part of the substrate resulting in the liquid one of evaporating and vaporizing off the substrate, wherein the pressurizing step occurs one of before, after and simultaneously with the applying radiation step.    
     
     
         202 . A method for performing processing of a semiconductor substrate comprising: 
 inserting the substrate into a processing chamber;    pressurizing the processing chamber by introducing into the chamber at least one of a gas, a mist, a vapor, a dust, a processing chemistry, a processing fluid, and a rinsing fluid; and    applying radiation to heat at least one of at least one layer of the substrate and a rinsing fluid, thereby reducing a surface tension of the rinsing fluid at a surface of the substrate.    
     
     
         203 . The method of  claim 202  wherein the applied radiation comprises at least one of microwave, UV, IR, and electromagnetic induction.  
     
     
         204 . The method of  claim 203  wherein the substrate is submerged.  
     
     
         205 . The method of  claim 203  wherein at least part of the substrate is at least one of coated with and in contact with at least one of a film and a layer of rinsing fluid and a layer of processing fluid.  
     
     
         206 . The method of  claim 203  wherein megasonic energy is applied to the substrate.  
     
     
         207 . The method of  claim 203  wherein the substrate is in contact with a vibration member.  
     
     
         208 . The method of  207  wherein the thickness of the vibration member and of the substrate is within about ±30of an odd multiple quarter wavelength of an applied megasonic energy.