US2007215337A1PendingUtilityA1

Heat Sink Material, Manufacturing Method For The Same, And Semiconductor Laser Device

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Assignee: MORIGAMI HIDEAKIPriority: Dec 8, 2004Filed: Sep 20, 2005Published: Sep 20, 2007
Est. expiryDec 8, 2024(expired)· nominal 20-yr term from priority
H10W 70/02H10W 40/10H01S 5/023H01S 5/0233H01S 5/0235H01S 5/02492H01S 5/02469H01S 5/4031Y10T29/4935
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Claims

Abstract

Provided are a heat sink material made of an alloy or a composite material including two or more types of elements which has an end surface that makes possible formation of an edge portion on which at least a laser element is mounted, a manufacturing method for the same, and a semiconductor laser device including the heat sink material. A heat sink material ( 10 ) is made of an alloy or a composite material including two or more types of elements, and provided with a main surface having a relatively large area and a secondary surface having a relatively small area which crosses the main surface, and the secondary surface includes a surface on which a discharging process has been carried out using a discharge wire ( 200 ) that is placed approximately parallel to the main surface. The manufacturing method for the heat sink material ( 10 ) is provided with the steps of placing the discharge wire ( 200 ) on a material ( 100, 50 ) to be approximately parallel to the main surface, and carrying out the discharging process on the material ( 100, 50 ) using the discharge wire ( 200 ) placed as described above.

Claims

exact text as granted — not AI-modified
1 . A heat sink material ( 10 ) made of an alloy or a composite material including two or more types of elements, comprising 
 a main surface having a relatively large area and a secondary surface having a relatively small area which crosses said main surface, wherein said secondary surface includes a surface on which a discharging process has been carried out using a discharge wire ( 200 ) that is placed approximately parallel to said main surface.    
     
     
         2 . The heat sink material ( 10 ) according to  claim 1 , wherein an approximate radius of curvature at an edge where said main surface and said secondary surface cross is no greater than 30 μm.  
     
     
         3 . The heat sink material ( 10 ) according to  claim 2 , wherein the number of chipped portions having a width of no greater than 30 μm and a length of no greater than 50 μm, which exist per 1 mm on a length of the edge portion on said secondary surface, is no greater than 10.  
     
     
         4 . The heat sink material ( 10 ) according to  claim 1 , wherein said alloy or composite material has an average coefficient of linear expansion at a temperature ranging from room temperature to 400° C. of no less than 3.0×10 −6 /K and no greater than 9.0×10 −6 /K and a thermal conductivity of no less than 100 W/m·K.  
     
     
         5 . The heat sink material ( 10 ) according to  claim 1 , wherein a material that forms the heat sink material is a material including two types of metals or a material including a metal and hard particles.  
     
     
         6 . The heat sink material according to  claim 5 , wherein the material that forms the heat sink material ( 10 ) is one type of material selected from the group consisting of an alloy including copper and tungsten, a composite material including diamond particles and copper, an alloy including copper and molybdenum, and a composite material including silicon carbide and aluminum.  
     
     
         7 . The heat sink material ( 10 ) according to  claim 1 , wherein a metal film is formed at least on said main surface.  
     
     
         8 . A semiconductor laser device, comprising: 
 a heat sink material ( 1 ); and    a semiconductor laser element chip ( 2 ) that is secured to the top of a main surface of said heat sink material ( 1 ), wherein    said heat sink material ( 1 ) is made of an alloy or a composite material including two or more types of elements and comprises a main surface having a relatively large area, and a secondary surface having a relatively small area which crosses said main surface, said secondary surface including a surface on which a discharging process has been carried out using a discharge wire ( 200 ) that is placed approximately parallel to said main surface, and    an end surface of said semiconductor laser element chip ( 2 ) is positioned on said main surface at a distance of no greater than 10 μm from an edge portion where the main surface and the secondary surface of said heat sink material ( 1 ) cross.    
     
     
         9 . A manufacturing method for a heat sink material ( 10 ), comprising the steps of 
 placing a discharge wire ( 200 ), on a material ( 100 ,  50 ) made of an alloy or a composite material including two or more types of elements and having a main surface which has a relatively large area, and a secondary surface which has a relatively small area and crosses said main surface, to be approximately parallel to said main surface; and    carrying out a discharging process on said material ( 100 ,  50 ) using said placed discharge wire ( 200 ).    
     
     
         10 . The manufacturing method for the heat sink material ( 10 ) according to  claim 9 , wherein said discharging process includes the steps of cutting the material, roughly finishing the cut surface, and finely finishing the cut surface.

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