Vertical plasma processing apparatus for semiconductor process

Abstract

A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.

1 . A vertical plasma processing apparatus for a semiconductor process, the apparatus comprising:
 a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction;   a support member configured to support the target substrates inside the process field;   an exhaust system configured to exhaust gas from the process field;   an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with the process container, the auxiliary chamber including a plasma generation area extending over a length corresponding to the plurality of target substrates in a vertical direction;   an electric field generation mechanism provided to the process container and configured to generate an RF electric field at the plasma generation area;   a partition plate located between the process field and the plasma generation area and having an insulative surface, the partition plate including a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction; and   a process gas supply system configured to supply a process gas into the auxiliary chamber, such that the process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.   
   
   
       2 . The apparatus according to  claim 1 , wherein the process container, the casing of the auxiliary chamber, and the partition plate consist essentially of the same insulative material and are connected to each other by welding. 
   
   
       3 . The apparatus according to  claim 1 , wherein the gas passage comprises a plurality of gas diffusion holes arrayed at intervals in a vertical direction over the plurality of target substrates to form gas flows parallel with the plurality of target substrates. 
   
   
       4 . The apparatus according to  claim 3 , wherein each of the plurality of gas diffusion holes is located between adjacent two of the plurality of target substrates. 
   
   
       5 . The apparatus according to  claim 3 , wherein the plurality of gas diffusion holes are arrayed in a plurality of vertical rows. 
   
   
       6 . The apparatus according to  claim 1 , wherein the gas passage comprises a slit extending in a vertical direction. 
   
   
       7 . The apparatus according to  claim 1 , wherein the process gas supply system comprises a nozzle detachably connected to the auxiliary chamber and configured to supply the process gas thereinto. 
   
   
       8 . The apparatus according to  claim 7 , wherein the nozzle extends in a vertical direction within the auxiliary chamber and includes a plurality of gas spouting holes arrayed at intervals in a vertical direction over the plurality of target substrates. 
   
   
       9 . The apparatus according to  claim 7 , wherein the auxiliary chamber is projected from a side of the process container; the process container includes a flange on a lower side; an auxiliary insertion pipe is airtightly connected between the auxiliary chamber and the flange; and the nozzle is inserted from below the flange through the auxiliary insertion pipe into the auxiliary chamber. 
   
   
       10 . The apparatus according to  claim 9 , wherein the flange, the casing of the auxiliary chamber, and the auxiliary insertion pipe consist essentially of the same insulative material and are connected to each other by welding. 
   
   
       11 . A vertical plasma film formation apparatus for a semiconductor process, the apparatus comprising:
 a process container having a process field configured to accommodate a plurality of target substrates at intervals in a vertical direction;   a support member configured to support the target substrates inside the process field;   a heater configured to heat the target substrates inside the process field;   an exhaust system configured to exhaust gas from the process field;   an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with the process container, the auxiliary chamber including a plasma generation area extending over a length corresponding to the plurality of target substrates in a vertical direction;   an electric field generation mechanism provided to the process container and configured to generate an RF electric field at the plasma generation area;   a partition plate located between the process field and the plasma generation area and having an insulative surface, the partition plate including a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction;   a process gas supply system configured to selectively supply into the process field a first process gas that provides a main material of a thin film and a second process gas that reacts with the first process gas, so as to deposit the thin film on the target substrates, such that at least one of the first and second process gases is supplied into the auxiliary chamber to be exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field; and   a control section configured to control an operation of the apparatus, wherein, in order to deposit the thin film on the target substrates, the control section executes supply of the first process gas to the process field and supply of the second process gas to the process field, repeatedly a plurality of times.   
   
   
       12 . The apparatus according to  claim 11 , wherein the process container, the casing of the auxiliary chamber, and the partition plate consist essentially of the same insulative material and are connected to each other by welding. 
   
   
       13 . The apparatus according to  claim 11 , wherein the gas passage comprises a plurality of gas diffusion holes arrayed at intervals in a vertical direction over the plurality of target substrates to form gas flows parallel with the plurality of target substrates. 
   
   
       14 . The apparatus according to  claim 13 , wherein each of the plurality of gas diffusion holes is located between adjacent two of the plurality of target substrates. 
   
   
       15 . The apparatus according to  claim 11 , wherein the gas passage comprises a slit extending in a vertical direction. 
   
   
       16 . The apparatus according to  claim 11 , wherein the control section sets the process field at a pressure of 0.2 to 1 Torr and sets the plasma generation area at a pressure of 0.7 to 5 Torr and higher than the process field, in depositing the thin film. 
   
   
       17 . The apparatus according to  claim 11 , wherein the process gas supply system comprises a nozzle detachably connected to the auxiliary chamber and configured to supply at least one of the first and second process gases thereinto. 
   
   
       18 . The apparatus according to  claim 17 , wherein the nozzle extends in a vertical direction within the auxiliary chamber and includes a plurality of gas spouting holes arrayed at intervals in a vertical direction over the plurality of target substrates. 
   
   
       19 . The apparatus according to  claim 17 , wherein the auxiliary chamber is projected from a side of the process container; the process container includes a flange on a lower side; an auxiliary insertion pipe is airtightly connected between the auxiliary chamber and the flange; and the nozzle is inserted from below the flange through the auxiliary insertion pipe into the auxiliary chamber. 
   
   
       20 . The apparatus according to  claim 19 , wherein the flange, the casing of the auxiliary chamber, and the auxiliary insertion pipe consist essentially of the same insulative material and are connected to each other by welding.