Imaging device and manufacturing method thereof

Abstract

Disclosed is an imaging device including a photodiode and floating diffusion region formed to be spaced from each other on a surface layer of a pixel region of a silicon (semiconductor) substrate, and a transfer gate having one of a concave and convex portions toward the floating diffusion region, the transfer gate being formed above the silicon substrate between the photodiode and the floating diffusion region by interposing a gate insulating film therebetween.

1 . An imaging device, comprising: 
 a photodiode and a floating diffusion region formed to be spaced from each other on a surface layer of a pixel region of a semiconductor substrate; and    a transfer gate having either of a concave and convex portion toward the floating diffusion region, the transfer gate being formed above the semiconductor substrate between the photodiode and the floating diffusion region by interposing a gate insulating film therebetween.    
     
     
         2 . The imaging device according to  claim 1 , wherein the transfer gate includes an extending portion extending along an edge of the floating diffusion region in the lateral direction of the semiconductor substrate.  
     
     
         3 . The imaging device according to  claim 1 , wherein the transfer gate includes a convex portion projecting to the floating diffusion region in the lateral direction of the semiconductor substrate.  
     
     
         4 . The imaging device according to  claim 1 , wherein the transfer gate includes a concave portion recessed toward the photodiode in a portion overlapping the floating diffusion region in the lateral direction of the semiconductor substrate.