US2007295985A1PendingUtilityA1
Gallium nitride material devices and methods of forming the same
Est. expiryFeb 23, 2021(expired)· nominal 20-yr term from priority
H01S 5/04254H01S 5/0207H01S 5/32341Y02E10/544H10D 62/8503H10D 64/23H10D 62/117H10D 30/801H10D 30/015H10D 8/043H10D 8/00H10H 20/819H10H 20/8312H10H 20/01335H10H 20/831H10H 20/018H10F 77/12485H10F 77/1246H10F 71/1278H10F 71/1274H10D 30/475H10H 20/825H10N 80/107
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Abstract
The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), light detecting devices (such as detectors and sensors), power rectifier diodes and FETs (e.g., HFETs), amongst others.
Claims
exact text as granted — not AI-modified1 . A semiconductor device comprising: a substrate; and a gallium nitride material region formed over the substrate, wherein the semiconductor device has at least one via extending from a first side of the semiconductor device, wherein the via is free of an electrical contact formed therein.
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