Assignee
NITRONEX CORP
US·18 granted patents·8 pending applications·1,541 citations·filing 2000–2008
Top patents by PatentIndex Score
26 records- 0199US6649287B2Gallium nitride materials and methodsNITRONEX CORP·Filed 2000·Granted Nov 18, 2003·248 cites·70 claims
- 0299US6617060B2Gallium nitride materials and methodsNITRONEX CORP·Filed 2002·Granted Sep 9, 2003·317 cites·75 claims
- 0397US7365374B2Gallium nitride material structures including substrates and methods associated with the sameNITRONEX CORP·Filed 2005·Granted Apr 29, 2008·52 cites·19 claims
- 0497US7361946B2Semiconductor device-based sensorsNITRONEX CORP·Filed 2004·Granted Apr 22, 2008·116 cites·15 claims
- 0597US7233028B2Gallium nitride material devices and methods of forming the sameNITRONEX CORP·Filed 2003·Granted Jun 19, 2007·103 cites·47 claims
- 0697US6611002B2Gallium nitride material devices and methods including backside viasNITRONEX CORP·Filed 2001·Granted Aug 26, 2003·176 cites·51 claims
- 0796US7566913B2Gallium nitride material devices including conductive regions and methods associated with the sameNITRONEX CORP·Filed 2006·Granted Jul 28, 2009·27 cites·19 claims
- 0896US7071498B2Gallium nitride material devices including an electrode-defining layer and methods of forming the sameNITRONEX CORP·Filed 2003·Granted Jul 4, 2006·163 cites·72 claims
- 0993US7352016B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2006·Granted Apr 1, 2008·23 cites·19 claims
- 1093US7352015B2Gallium nitride materials and methods associated with the sameNITRONEX CORP·Filed 2005·Granted Apr 1, 2008·17 cites·47 claims
- 1193US7247889B2III-nitride material structures including silicon substratesNITRONEX CORP·Filed 2004·Granted Jul 24, 2007·83 cites·32 claims
- 1292US7791106B2Gallium nitride material structures including substrates and methods associated with the sameNITRONEX CORP·Filed 2008·Granted Sep 7, 2010·17 cites·12 claims
- 1392US7339205B2Gallium nitride materials and methods associated with the sameNITRONEX CORP·Filed 2004·Granted Mar 4, 2008·43 cites·29 claims
- 1491US7745848B1Gallium nitride material devices and thermal designs thereofNITRONEX CORP·Filed 2007·Granted Jun 29, 2010·52 cites·16 claims
- 1591US7135720B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2004·Granted Nov 14, 2006·50 cites·81 claims
- 1683US6956250B2Gallium nitride materials including thermally conductive regionsNITRONEX CORP·Filed 2001·Granted Oct 18, 2005·30 cites·74 claims
- 1781US7687827B2III-nitride materials including low dislocation densities and methods associated with the sameNITRONEX CORP·Filed 2004·Granted Mar 30, 2010·21 cites·37 claims
- 1871US7569871B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2008·Granted Aug 4, 2009·3 cites·20 claims
- 1956US2008185616A1Semiconductor device-based sensors and methods associated with the sameNITRONEX CORP·Filed 2008·Application pending·0 cites
- 2051US2007295985A1Gallium nitride material devices and methods of forming the sameNITRONEX CORP·Filed 2007·Application pending·0 cites
- 2146US2004119067A1Gallium nitride materials and methodsNITRONEX CORP·Filed 2003·Application pending·0 cites
- 2245US2005127397A1Gallium nitride materials including thermally conductive regionsNITRONEX CORP·Filed 2005·Application pending·0 cites
- 2345US2006249750A1Gallium nitride material devices including an electrode-defining layer and methods of forming the sameNITRONEX CORP·Filed 2006·Application pending·0 cites
- 2442US2007202360A1Gallium nitride material transistors and methods for wideband applicationsNITRONEX CORP·Filed 2006·Application pending·0 cites
- 2539US2006214289A1Gallium nitride material-based monolithic microwave integrated circuitsNITRONEX CORP·Filed 2005·Application pending·0 cites
- 2636US2005145851A1Gallium nitride material structures including isolation regions and methodsNITRONEX CORP·Filed 2004·Application pending·0 cites
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →