Cooled pvd shield

Abstract

The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.

1 . A physical vapor deposition apparatus, comprising:
 a shadow frame movable between a lowered position and a raised position;   a top shield which at least partially overlies the shadow frame; and   a cooling manifold coupled with the top shield, wherein the cooling manifold controls the temperature of the top shield.   
   
   
       2 . The apparatus of  claim 1 , wherein the top shield reduces material deposition on the shadow frame. 
   
   
       3 . The apparatus of  claim 1 , wherein the shield and the manifold are a unitary piece. 
   
   
       4 . The apparatus of  claim 1 , wherein the cooling manifold is water cooled. 
   
   
       5 . The apparatus of  claim 1 , further comprising:
 a manifold shelf coupled to the apparatus, wherein the cooling manifold is coupled to the manifold shelf; and   an under shield coupled to the cooling manifold, wherein the shadow frame rests on the under shield when the shadow frame is in the lowered position.   
   
   
       6 . The apparatus of  claim 5 , further comprising:
 cooling channels coupled between the manifold shelf and the cooling manifold.   
   
   
       7 . The apparatus of  claim 5 , wherein the under shield is coupled between the cooling manifold and the top shield. 
   
   
       8 . The apparatus of  claim 1 , further comprising:
 cooling channels within the cooling manifold.   
   
   
       9 . The apparatus of  claim 1 , wherein the top shield comprises aluminum or stainless steel. 
   
   
       10 . A physical vapor deposition apparatus, comprising:
 a chamber;   a susceptor disposed in the chamber and movable between a raised position and a lowered position;   a shadow frame positioned to shield a periphery of the susceptor when the susceptor is in the raised position, the shadow frame movable between a raised position and a lowered position; and   a top shield positioned to shield at least a portion of the shadow frame, wherein the top shield is cooled.   
   
   
       11 . The apparatus of  claim 10 , further comprising:
 a cooling manifold coupled with the top shield, wherein the cooling manifold cools the top shield;   an under shield coupled with the cooling manifold, wherein the shadow frame rests on the under shield when in the lowered position; and   a manifold shelf coupled with the cooling manifold.   
   
   
       12 . The apparatus of  claim 11 , wherein the cooling manifold and at least one of the top shield, the under shield, and the manifold shelf are a unitary piece. 
   
   
       13 . A method of processing a substrate, comprising:
 positioning a target over a susceptor within a processing chamber, wherein the processing chamber comprises a shadow frame that shields an edge of the susceptor from deposition and a top shield that shields the shadow frame from deposition; and   sputtering material form the target onto the substrate to deposit a layer on the substrate.   
   
   
       14 . The method of  claim 13 , wherein a cooling manifold is coupled with the top shield, and further comprising:
 flowing a cooling fluid through the cooling manifold to cool the top shield.   
   
   
       15 . The method of  claim 14 , wherein the cooling fluid is water. 
   
   
       16 . The method of  claim 13 , further comprising:
 positioning a substrate within the chamber, wherein the substrate is positioned on lift pins within the chamber.   
   
   
       17 . The method of  claim 16 , further comprising:
 raising the susceptor to a processing position and lowering the lift pins so that the substrate rests on the susceptor.   
   
   
       18 . The method of  claim 17 , wherein the chamber further comprises a shadow mask for shielding an edge of the susceptor, the method further comprising:
 raising the shadow mask from a lowered position to a raised position, wherein the shadow mask is raised by the susceptor as it is raised.   
   
   
       19 . A physical vapor deposition method, comprising:
 positioning a substrate on a susceptor within a chamber, the susceptor movable between a raised position and a lowered position, the chamber comprising shadow frame movable between a raised position and a lowered position and a top shield, wherein the top shield at least partially shields the shadow frame;   raising the susceptor and shadow frame to a processing position; and   depositing material on the substrate, wherein the top shield reduces the amount of deposition on the shadow frame.   
   
   
       20 . The method of  claim 19 , further comprising:
 cooling the top shield.   
   
   
       21 . A shield kit, comprising:
 a manifold shelf;   a cooling manifold coupled with the manifold shelf, wherein cooling channels are coupled within the cooling manifold;   a top shield coupled with the cooling manifold, wherein the top shield has an interior width that is less than the interior width of the cooling manifold; and   an under shield coupled with the cooling manifold, wherein the under shield has an interior width that is greater than the interior width of the top shield, but less than the interior width of the cooling manifold.   
   
   
       22 . The shield kit of  claim 21 , wherein the cooling manifold and at least one of the manifold shield, top shield, and under shield are a unitary piece.