Etchant and replenishment solution therefor, and etching method and method for producing wiring board using the same

Abstract

An etchant of the present invention includes an aqueous solution containing hydrochloric acid, nitric acid, and a cupric ion source. An etching method of the present invention includes bringing the etchant into contact with at least one metal selected from nickel, chromium, nickel-chromium alloys, and palladium. Another etching method of the present invention includes bringing a first etchant that includes an aqueous solution containing at least the following components A to C (A. hydrochloric acid; B. at least one compound selected from the following (a) to (c): (a) compounds with 7 or less carbon atoms, containing a sulfur atom(s) and at least one group selected from an amino group, an imino group, a carboxyl group, a carbonyl group, and a hydroxyl group; (b) thiazole; and (c) thiazole compounds; and C. a surfactant) into contact with a surface of the metal, and then bringing a second solution that includes an aqueous solution containing hydrochloric acid, nitric acid, and a cupric ion source into contact with the surface of the metal. According to the etchant and the etching methods of the present invention, it is possible to etch at least one metal selected from nickel, chromium, nickel-chromium alloys, and palladium quickly and suppress excessive dissolution of copper.

1 . An etchant for at least one metal selected from nickel, chromium, nickel-chromium alloys, and palladium, the etchant comprising an aqueous solution comprising: 
 hydrochloric acid;    nitric acid; and 
 a cupric ion source.  
   
   
   
       2 . The etchant according to  claim 1 , wherein the etchant is the aqueous solution in which a concentration of the hydrochloric acid is in a range from 0.1 to 35 mass %, a concentration of the nitric acid is in a range from 0.1 to 20 mass %, and a concentration of a material containing the cupric ion source, measured as a concentration of copper, is in a range from 0.00001 to 0.1 mass %, with the etchant being taken as 100 mass %.  
   
   
       3 . The etchant according to  claim 1 , further comprising 1 to 60 mass % of sulfuric acid.  
   
   
       4 . The etchant according to  claim 1 , further comprising 0.001 to 1 mass % of a surfactant.  
   
   
       5 . A set of etchants comprising a first etchant and a second etchant, wherein 
 the first etchant comprises an aqueous solution comprising at least the following components A to C: 
 A. hydrochloric acid;  
 B. at least one compound selected from the following (a) to (c): (a) compounds with 7 or less carbon atoms, containing a sulfur atom and at least one group selected from an amino group, an imino group, a carboxyl group, a carbonyl group, and a hydroxyl group; (b) thiazole; and (c) thiazole compounds; and  
 C. a surfactant, and  
   the second etchant comprises an aqueous solution comprising: 
 hydrochloric acid;  
 nitric acid; and  
 a cupric ion source.  
   
   
   
       6 . The etchant according to  claim 5 , wherein the compound with 7 or less carbon atoms, containing a sulfur atom and at least one group selected from an amino group, an imino group, a carboxyl group, a carbonyl group, and a hydroxyl group is at least one selected from thiourea, thioureadioxide, N-methylthiourea, 1,3-dimethylthiourea, 1,3-diethylthiourea, ethylene thiourea, 2-thiobarbituric acid, thioglycolic acid, β-mercaptopropionic acid, 2-mercaptopropionic acid, 2,2′-thiodiglycolic acid, thiomalic acid, mercaptosuccinic acid, L-cysteine, L(−)-Cystine, and thioglycol.  
   
   
       7 . The etchant according to  claim 5 , wherein the thiazole compound is 2-mercaptobenzothiazole.  
   
   
       8 . The etchant according to  claim 5 , wherein a concentration of the component B is in a range from 0.01 to 30 mass %.  
   
   
       9 . The etchant according to  claim 5 , wherein a concentration of the surfactant as the component C is in a range from 0.001 to 1 mass %.  
   
   
       10 - 18 . (canceled)