Clean ignition system for wafer substrate processing

Abstract

An edge area of the substrate processing device is disclosed. The edge area being processed is isolated from the remainder of the substrate by directing a flow of an inert gas through a plenum near the area to be processed thus forming a barrier while directing a flow of reactive species at an angle relative to the top surface of the substrate towards the substrate edge area thus processing the substrate edge area. A flow of oxygen containing gas into the processing chamber together with a negative exhaust pressure may contribute to the biasing of reactive species and other gases away from the non-processing areas of the substrate. A clean ignition system is used to ignite the combustion flame.

1 . A substrate processing apparatus for processing the substrate with a combustion flame of hydrogen and a non-oxygen oxidizer, comprising: 
 a processing chamber for receiving the substrate and for confining a clean environment for the combustion flame;    a processing nozzle assembly within the processing chamber for directing the combustion flame onto the substrate;    a source for fuel and the oxidizer operationally attached to the processing chamber;    an igniter assembly having a ceramic hot body igniter defining an interior cavity;    a heating element disposed within the interior cavity;    a means for energizing the heating element; and    an igniter nozzle assembly operably coupled to a fuel source, said igniter assembly configured to direct an initiation combustion flame within a predetermined distance from the processing nozzle assembly.    
   
   
       2 . The substrate processing apparatus for processing the substrate with a combustion flame of  claim 1 , wherein the hot body igniter comprises a sapphire body.  
   
   
       3 . The substrate processing apparatus for processing the substrate with a combustion flame of  claim 1 , wherein the hot body igniter comprises an optically clear ceramic.  
   
   
       4 . The substrate processing apparatus for processing the substrate with a combustion flame of  claim 1 , wherein the heater element is electrically connected to a power source.  
   
   
       5 . The substrate processing apparatus for processing the substrate with a combustion flame of  claim 1 , further comprising a power source configured to apply an electromagnetic wave to the heater element.  
   
   
       6 . The substrate processing apparatus for processing the substrate with a combustion flame of  claim 5 , wherein the power source is one of a laser or a laser diode.  
   
   
       7 . The substrate processing apparatus for processing the substrate with a combustion flame of  claim 1 , further comprising a power source configured to apply an electromagnetic wave to the heater element.  
   
   
       8 . The substrate processing apparatus for processing the substrate with a combustion flame of  claim 1 , wherein the processing chamber maintains a substantially atmospheric pressure.  
   
   
       9 . The substrate according to  claim 1  wherein the ceramic has a melting temperature greater than 3000° k.  
   
   
       10 . An igniter assembly comprising: 
 a sapphire body;    a heating element thermally coupled to the sapphire body;    a power source configured to apply an electromagnetic wave to the heating element; and    an igniter nozzle assembly disposed adjacent to the sapphire body, said nozzle assembly being coupled to a fuel source.    
   
   
       11 . The igniter assembly according to  claim 10  wherein the sapphire body defines an interior chamber and wherein the heating element is disposed within the chamber.  
   
   
       12 . The igniter assembly according to  claim 10  wherein the power source is a laser diode.  
   
   
       13 . The igniter assembly according to  claim 12  wherein the power source is a laser.  
   
   
       14 . The igniter assembly according to  claim 11  wherein the power source is an electrical current supply.  
   
   
       15 . The igniter assembly according to  claim 10  wherein a power source transmits photons at a predetermined frequency and the sapphire body is transparent at the predetermined frequency.  
   
   
       16 . The igniter assembly according to  claim 10  wherein the igniter nozzle defines a gas jet along a first line and wherein the sapphire body is disposed a first predetermined distance from the line.  
   
   
       17 . The igniter assembly according to  claim 16  further comprising at least one process gas nozzle, said process gas nozzle is disposed a second predetermined distance from the line.  
   
   
       18 . The igniter assembly according to  claim 19  further comprising an air knife disposed between the igniter assembly and the process gas nozzle.  
   
   
       19 . A method for igniting a flame comprising: 
 disposing a heating element within an igniter assembly;    energizing the heating element so as to heat the igniter assembly to a predetermined ignition temperature;    passing a fuel past the ignition nozzle at a first rate past the igniter assembly to ignite a flame;    passing the flame past a plurality of nozzles to ignite a plurality of processing flames from the nozzles.    
   
   
       20 . The method of igniting a flame according to  claim 19  further comprising passing an air dam in front of the first flame.  
   
   
       21 . The method of ignition according to  claim 19  further comprising passing a non-flammable gas though the ignition nozzle at a second predetermined rate.  
   
   
       22 . The method of igniting a flame according to  claim 21  wherein the second predetermined rate is greater than the first predetermined rate.