High performance integrated inductor

Abstract

Some embodiments of the present invention include providing high performance integrated inductors.

1 . A method of forming an integrated inductor comprising: 
 forming a pattern over a conductive pattern on a substrate;    forming a magnetic core over the pattern;    forming a support over the magnetic core;    forming a second pattern including openings over the support;    depositing a conductor in the openings; and    removing the second pattern and the support.    
   
   
       2 . The method of  claim 1 , wherein forming the magnetic core includes depositing magnetic material, patterning a resist layer over the magnetic material, etching exposed magnetic material, and removing the resist layer.  
   
   
       3 . The method of  claim 1 , wherein forming the magnetic core includes patterning a resist layer, depositing magnetic material over the resist layer, and removing the resist layer.  
   
   
       4 . The method of  claim 1 , further comprising: 
 forming a protective coating over the magnetic core.    
   
   
       5 . The method of  claim 1 , wherein forming the support includes forming a column over the magnetic core and baking the column to form a dome.  
   
   
       6 . The method of  claim 1 , wherein forming the support includes forming a column over the magnetic core and reflowing the column into a dome.  
   
   
       7 . The method of  claim 6 , wherein the column has an aspect ratio of approximately 1:1.  
   
   
       8 . The method of  claim 1 , wherein the support has a width greater than a width of the magnetic core.  
   
   
       9 . The method of  claim 1 , wherein forming the second pattern includes patterning a photosensitive material.  
   
   
       10 . The method of  claim 1 , further comprising: 
 forming a seed layer over the dome and a portion of the metal pattern.    
   
   
       11 . The method of  claim 10 , wherein the seed layer comprises copper.  
   
   
       12 . The method of  claim 10 , wherein depositing the metal includes electroplating.  
   
   
       13 . The method of  claim 10 , further comprising: 
 removing a portion of the seed layer.    
   
   
       14 . The method of  claim 1 , wherein the conductor comprises at least one of copper, aluminum, or gold.  
   
   
       15 . The method of  claim 1 , further comprising: 
 forming a second dome over the pattern;    forming a seed layer over the second dome;    forming a third pattern including openings over the barrier layer;    depositing a second metal into the openings of the third pattern;    removing the third pattern;    forming a fourth pattern including openings over the barrier layer;    etching portions of the seed layer and the second dome to expose the pattern; and    removing the second dome.    
   
   
       16 . A method of forming an integrated inductor comprising: 
 forming a pattern over a metal pattern on a substrate;    forming a magnetic core over the pattern;    forming a dome over the magnetic core;    depositing a seed layer over the dome and a portion of the metal pattern;    forming a second pattern including openings over the dome;    depositing a metal on the seed layer in the openings; and    removing the second pattern, a portion of the seed layer, and the dome to form an inductor.    
   
   
       17 . The method of  claim 16 , wherein forming the dome includes patterning resist to form a column over the magnetic core and reflowing the column.  
   
   
       18 . The method of  claim 16 , wherein forming the dome includes patterning resist to form a column over the magnetic core and baking the column.  
   
   
       19 . The method of  claim 16 , wherein forming the magnetic core includes depositing magnetic material, patterning a resist layer over the magnetic material, etching exposed magnetic material, and removing the resist layer.  
   
   
       20 . The method of  claim 16 , wherein forming the magnetic core includes patterning a resist layer, depositing magnetic material over the resist layer, and removing the resist layer.  
   
   
       21 . The method of  claim 16 , further comprising: 
 forming a second dome over the pattern;    forming a second seed layer over the second dome;    forming a third pattern including openings over the barrier layer;    depositing a second metal into the openings of the third pattern;    removing the third pattern;    forming a fourth pattern including openings over the barrier layer;    etching the barrier layer and the second dome to expose the pattern; and    removing the fourth pattern and the second dome.    
   
   
       22 . An apparatus comprising: 
 a plurality of conductive segments situated substantially in a row on a substrate;    a conductive element connecting an end of a first conductive segment to an opposite end of a second conductive segment; and    a magnetic material between the element and the first conductive segment.    
   
   
       23 . The apparatus of  claim 22 , wherein the first conductive segment comprises a metal.  
   
   
       24 . The apparatus of  claim 22 , wherein the conductive element is substantially in the shape of an arch.  
   
   
       25 . The apparatus of  claim 22 , wherein the conductive element is substantially in the shape of an arch having a squared off bottom portion and a rounded top portion.  
   
   
       26 . The apparatus of  claim 22 , wherein the conductive element comprises at least one of copper, aluminum, or gold.  
   
   
       27 . The apparatus of  claim 22 , wherein the conductive element comprises a seed layer.  
   
   
       28 . The apparatus of  claim 22 , wherein the magnetic material comprises at least one of CoZrTa, a permalloy, NiFe, FeTaN, or NiFeRe.  
   
   
       29 . The apparatus of  claim 22 , further comprising: 
 a separation layer between the magnetic material and the first conductive segment.    
   
   
       30 . The apparatus of  claim 22 , further comprising: 
 a protective coating between the magnetic material and the element.    
   
   
       31 . The apparatus of  claim 22 , further comprising: 
 a plurality of conductive elements connecting ends of the conductive segments to opposite ends of adjacent conductive segments.    
   
   
       32 . The apparatus of  claim 22 , wherein the number of conductive segments is in the range of about 2 to 10.  
   
   
       33 . The apparatus of  claim 22 , wherein the number of conductive segments is in the range of about 2 to 5.  
   
   
       34 . The apparatus of  claim 22 , wherein the apparatus has a width in the range of about 100 to 200 microns and a height in the range of about 40 to 80 microns.  
   
   
       35 . A system comprising: 
 a microprocessor including an inductor having a plurality of conductive segments situated substantially in a row, a conductive element connecting an end of a first conductive segment to an opposite end of a second conductive segment, and a magnetic material between the element and the first conductive segment integrated on a surface thereof; and    a display processor.    
   
   
       36 . The system of  claim 35 , further comprising: 
 a volatile memory component.