Novel resins and photoresist compositions comprising same

Abstract

Provided are new resins that comprise carbocyclic aryl units with hetero substitution units and photoresists that contain such resins. Particularly preferred photoresists of the invention comprise a deblocking resin that contains hydroxy naphthyl units and can be effectively imaged with sub-200 nm radiation such as 193 nm radiation.

1 - 68 . (canceled)  
   
   
       69 . A method for providing a photoresist relief image, comprising: 
 a) applying a coating layer of a positive-acting photoresist composition on a substrate, the photoresist composition comprising a photoactive component and a tetrapolymer or pentapolymer that comprises hetero-substituted multi-ring carbocyclic aryl groups; and    b) exposing the photoresist composition layer to activating radiation having a wavelength of less than 200 nm and developing the exposed photoresist composition coating layer.    
   
   
       70 . The method of  claim 69  wherein the photoresist layer is exposed to radiation having a wavelength of about 193 nm.  
   
   
       71 . The method of  claim 69  wherein the tetrapolymer or pentapolymer has a weight average molecular weight of from greater than 2,000 to about 100,000.  
   
   
       72 . The method of  claim 69  wherein the tetrapolymer or pentapolymer comprises hetero-substituted naphthyl groups.  
   
   
       73 . The method of  claim 69  wherein the tetrapolymer or pentapolymer comprises units containing hydroxy naphthyl groups.  
   
   
       74 . The method of  claim 69  wherein the photoresist composition comprises a tetrapolymer that comprises hetero-substituted multi-ring carbocyclic aryl groups.  
   
   
       75 . The method of  claim 69  wherein the photoresist composition comprises a pentapolymer that comprises hetero-substituted multi-ring carbocyclic aryl groups.  
   
   
       76 . The method of  claim 69  wherein the tetrapolymer or pentapolymer comprises photoacid-labile groups.  
   
   
       77 . The method of  claim 69  wherein the tetrapolymer or pentapolymer comprises polymerized acrylate units.  
   
   
       78 . The method of  claim 69  wherein the tetrapolymer or pentapolymer comprises lactone groups.  
   
   
       79 . A photoresist composition comprising a photoactive component and a tetrapolymer or pentapolymer that comprises hetero-substituted multi-ring carbocyclic aryl groups.  
   
   
       80 . The photoresist composition of  claim 79  wherein the tetrapolymer or pentapolymer has a weight average molecular weight of from greater than 2,000 to about 100,000.  
   
   
       81 . The photoresist composition of  claim 79  wherein the tetrapolymer or pentapolymer comprises hetero-substituted naphthyl groups.  
   
   
       82 . The photoresist composition of  claim 79  wherein the tetrapolymer or pentapolymer comprises units containing hydroxy naphthyl groups.  
   
   
       83 . The photoresist composition method of  claim 79  wherein the photoresist composition comprises a tetrapolymer that comprises hetero-substituted multi-ring carbocyclic aryl groups.  
   
   
       84 . The photoresist composition of  claim 79  wherein the photoresist composition comprises a pentapolymer that comprises hetero-substituted multi-ring carbocyclic aryl groups.  
   
   
       85 . The photoresist composition method of  claim 75  wherein the tetrapolymer or pentapolymer comprises photoacid-labile groups.  
   
   
       86 . The photoresist composition of  claim 79  wherein the tetrapolymer or pentapolymer comprises polymerized acrylate units.  
   
   
       87 . The photoresist composition of  claim 79  wherein the tetrapolymer or pentapolymer comprises lactone groups.  
   
   
       88 . The photoresist composition of  claim 79  wherein the tetrapolymer or pentapolymer is substantially free of aromatic groups other than the hetero-substituted carbocyclic aryl groups.