US2008042100A1PendingUtilityA1
Slurry composition
Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Jul 15, 2004Filed: Sep 14, 2007Published: Feb 21, 2008
Est. expiryJul 15, 2024(expired)· nominal 20-yr term from priority
H10P 52/403H10D 64/01326H10W 20/062H10P 52/00C09K 3/1463C09G 1/02
55
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Claims
Abstract
A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to about 1.5 weight percent of an additive. The slurry composition may further include a surfactant. In a polishing method using the slurry composition, a polysilicon layer may be rapidly polished, and also dishing and erosion of the polysilicon layer may be suppressed.
Claims
exact text as granted — not AI-modified1 . A slurry composition comprising:
about 4.25 to about 18.5 weight percent of an abrasive; about 80 to about 95 weight percent of deionized water; and about 0.05 to about 1.5 weight percent of an additive.
2 . The slurry composition as claimed in claim 1 , wherein the abrasive comprises at least one material selected from the group consisting of silica, ceria, alumina, titania, zirconia and germania.
3 . The slurry composition as claimed in claim 2 , wherein the abrasive comprises silica.
4 . The slurry composition as claimed in claim 1 , wherein the additive comprises at least one material selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, and an amine compound.
5 . The slurry composition as claimed in claim 4 , wherein the amine compound comprises at least one material selected from the group consisting of quaternary ammonium, quaternary ammonium salt, ethanol amine, dimethanolamine, trimethanol amine, ethylene diamine, cetyltrimethyl ammonium bromide, and cetylpyridinium chloride.
6 . The slurry composition as claimed in claim 5 , wherein the quaternary ammonium comprises at least one material selected from the group consisting of tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetramethyl ammonium chloride, tetraethyl ammonium chloride, tetramethyl ammonium fluoride, and tetraethyl ammonium fluoride.
7 . The slurry composition as claimed in claim 1 , further comprising about 0.74 to about 2.0 weight percent of a surfactant.
8 . The slurry composition of claim 7 , wherein the abrasive comprises at least one material selected from the group consisting of silica, ceria, alumina, titania, zirconia and germania.
9 . The slurry composition of claim 7 , wherein the additive comprises at least one material selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide and an amine compound.
10 . The slurry composition of claim 9 , wherein the amine compound comprises at least one material selected from the group consisting of quaternary ammonium, quaternary ammonium salt, ethanol amine, dimethanolamine, trimethanol amine, ethylene diamine, cetyltrimethyl ammonium bromide and cetylpyridinium chloride.
11 . The slurry composition of claim 10 , wherein the quaternary ammonium comprises at least one material selected from the group consisting of tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetramethyl ammonium chloride, tetraethyl ammonium chloride, tetramethyl ammonium fluoride, and tetraethyl ammonium fluoride.
12 . The slurry composition of claim 7 , wherein the surfactant comprises a nonionic polymer.
13 . The slurry composition of claim 12 , wherein the nonionic polymer comprises at least one material selected from the group consisting of a block copolymer of polyethylene glycol and polypropylene glycol, a random copolymer of polyethylene glycol and polypropylene glycol, a block copolymer of polyethylene oxide and polypropylene oxide, and a random copolymer of polyethylene oxide and polypropylene oxide.
14 . The slurry composition of claim 12 , wherein the nonionic polymer has a chemical formula of H—(OCH 2 CH 2 ) x —(OCH(CH 3 )CH 2 ) y —(OCH 2 CH 2 ) z —OH, wherein x, y, and z are positive integers.
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