Silicon epitaxial wafer and method for manufacturing the same

Abstract

This method for manufacturing a silicon epitaxial wafer includes: a step of growing an epitaxial layer having silicon on a silicon wafer having a main surface of {110}; and a cooling step of cooling the silicon wafer after growing the epitaxial layer. In a first aspect, in the cooling step, a rapid cooling at a cooling rate of more than 500° C./minute is performed in a range of 750° C. to 650° C. In a second aspect, in the cooling step, a passivation film is grown on a main surface of the epitaxial layer at a temperature of 720° C. or more. In a third aspect, a single crystal silicon wafer in which a misorientation angle of a main surface of {110} surface is in a range from 3.0° to 6.2° inclined towards a <110> direction perpendicular to the main surface or a <111> direction is used as the silicon wafer.

1 - 6 . (canceled)  
   
   
       7 . A silicon epitaxial wafer comprising: a silicon wafer having a main surface of {110}; and an epitaxial layer having silicon and being formed on the main surface, 
 wherein the silicon epitaxial is manufactured by a method comprising:    growing an epitaxial layer having silicon on a silicon wafer having a main surface of {110}; and    cooling the silicon wafer after growing the epitaxial layer,    wherein the cooling comprises cooling at a cooling rate of more than 500° C./minute and is performed in a range of 750° C. to 650° C.    
   
   
       8 . A silicon epitaxial wafer comprising: a silicon wafer having a main surface of {110}; and an epitaxial layer having silicon and being formed on the main surface, 
 wherein the silicon epitaxial wafer is manufactured by a method comprising:    growing an epitaxial layer having silicon on a silicon wafer having a main surface of {110};    cooling the silicon wafer after growing the epitaxial layer; and    growing a passivation film on a main surface of the epitaxial layer at a temperature of 720° C. or more during the cooling.    
   
   
       9 . A silicon epitaxial wafer comprising: a silicon having a main surface of {110}; and an epitaxial layer having silicon and being formed on the main surface, 
 wherein a misorientation angle of a main surface of {110} surface is in a range from 3.0° to 6.2° inclined towards a <110> direction perpendicular to the main surface or a <111> direction, and    the silicon epitaxial wafer is manufactured by growing an eptiaxial layer having silicon on a silicon wafer having a main surface of {110}; and    cooling the silicon wafer after growing the epitaxial layer, and    wherein a single crystal silicon wafer in which a misorientation angle of a main surface of {110} surface is in a range from 3.0° to 6.2° inclined towards a <110> direction perpendicular to the main surface or a <111> direction is used as the silicon wafer.    
   
   
       10 . A silicon epitaxial wafer as in  claim 9 , the method further comprising: annealing for 10 seconds or more during the cooling.  
   
   
       11 . A silicon epitaxial wafer as in  claim 10  wherein the annealing is performed in a range of 690° C. to 720° C.