Semiconductor devices and methods of fabricating the same

Abstract

Embodiments include a semiconductor device comprising: a pad formed on an insulating layer and having an electric connection region with external components; and a protective insulating layer which has an aperture for exposing the electric connection region. The protective insulating layer may include a first insulating layer and a second insulating layer, and side surfaces of these insulating layers are exposed to the aperture. At least part of the side surfaces surrounding the electric connection region have a tapered configuration at an acute angle to a top surface of the pad. This semiconductor device not only enables reduction of the fabrication steps, but also provides a reliable passivation structure for a pad with sufficient thickness and stress relaxation characteristics.

1 . A bonding pad structure comprising: 
 a bonding pad formed over a portion of a substrate;    an insulating layer formed over a portion of the bonding pad, wherein the bonding pad includes an area uncovered by the insulating layer;    the insulating layer including a first layer and a second layer, the first layer positioned between the bonding pad and the second layer, the first layer including a tapered side surface having an acute angle to a surface of the bonding pad, the second layer including a tapered side surface having an acute angle to the surface of the bonding pad;    wherein the first layer tapered side surface acute angle is greater than the second layer tapered side surface acute angle; and    wherein the second layer tapered side surface has an angle of 30° to 40° to the surface of the bonding pad.    
     
     
         2 . The bonding pad structure of  claim 11 , wherein the first layer tapered side surface has an angle of 60° to 90° to the surface of the bonding pad.  
     
     
         3 . The bonding pad structure of  claim 1 , the first layer including a silicon oxide layer, and the second layer including a silicon nitride layer.  
     
     
         4 . The bonding pad structure of  claim 1 , the bonding pad including a barrier layer.  
     
     
         5 . The bonding pad structure of  claim 1 , wherein a distance between an upper end of the first layer tapered side surface and a lower end of the second layer tapered side surface is no greater than 1 μm.  
     
     
         6 . The bonding pad structure of  claim 1 , wherein a distance between an upper end of the first layer tapered side surface and a lower end of the second layer tapered side surface is no greater than 3 μm.  
     
     
         7 . The bonding pad structure of  claim 1 , the first layer having a thickness in the range of 400 nm to 600 nm.  
     
     
         8 . The bonding pad structure of  claim 1 , the second layer having a thickness that is greater than that of the first layer.  
     
     
         9 . The bonding pad structure of  claim 1 , wherein the first layer includes an upper portion uncovered by the second layer, the upper portion uncovered by the second layer being positioned between an upper end of a side surface of the first layer and a lower end of the tapered side surface of the second layer.  
     
     
         10 . A bonding pad structure comprising: 
 a bonding pad formed over a portion of a substrate; and    an insulating layer on the bonding pad;    the insulating layer including a first layer and a second layer, the first layer positioned between the bonding pad and the second layer, the second layer including a tapered side surface having an acute angle to a surface of the bonding pad;    the bonding pad including an area that is uncovered by the insulating layer; and    the second layer tapered side surface having an angle of 30° to 40° to the surface of the bonding pad.    
     
     
         11 . The bonding pad structure of  claim 10 , the first layer including a silicon oxide layer, and the second layer including a silicon nitride layer.  
     
     
         12 . The bonding pad structure of  claim 10 , the bonding pad including a barrier layer.  
     
     
         13 . The bonding pad structure of  claim 10 , wherein a distance between an upper end of the first layer and a lower end of the second layer tapered side surface is no greater than 1 μm.  
     
     
         14 . The bonding pad structure of  claim 10 , the first layer having a thickness in the range of 400 nm to 600 nm.  
     
     
         15 . The bonding pad structure of  claim 10  the second layer having a thickness that is greater than that of the first layer.  
     
     
         16 . The bonding pad structure of  claim 10 , the first layer including a tapered side surface having an acute angle to the surface of the bonding pad.  
     
     
         17 . The bonding pad structure of  claim 10 , 
 the first layer including an upper portion uncovered by the second layer, the upper portion uncovered by the second layer being positioned between an upper end of a side surface of the first layer and a lower end of the tapered side surface of the second layer; and    wherein a distance between the upper end of the side surface of the first layer and the lower end of the second layer tapered side surface is no greater than 1 μm.    
     
     
         18 . The bonding pad structure of  claim 1 , wherein the first layer has a tapered side surface having an acute angle to the surface of the bonding pad, and the first layer tapered side surface acute angle is greater than that of the second layer tapered side surface.