Method of fabricating conductive lines and structure of the same

Abstract

A method of forming a conductive line suitable for decreasing a sheet resistance of the conductive lines. The method comprises steps of providing a material layer having a conductive layer formed thereon and forming a patterned mask layer on the conductive layer. In addition, a portion of the conductive layer is removed by using the patterned mask layer as a mask and a spacer is formed on a sidewall of the patterned mask layer and the conductive layer. A portion of the conductive layer is removed until the material layer is exposed to form a conductive line, wherein the spacer and the patterned mask layer serve as a mask.

1 - 6 . (canceled)  
   
   
       7 . A conductive line structure comprising: 
 a first portion of a conductive line; and    a second portion of the conductive line adjacent to the first portion of the conductive line, wherein a width of the first portion is larger than a width of the second portion.    
   
   
       8 . The conductive line structure of  claim 7 , wherein a material of the first conductive portion and the second conductive portion is selected from the group consisting of doped polysilicon, aluminum, copper and alloys of aluminum and copper.  
   
   
       9 . The conductive line structure of  claim 7 , further comprising a mask layer located over the second portion of the conductive line.  
   
   
       10 . The conductive line structure of  claim 9 , wherein a material of the mask layer is selected from the group consisting of titanium/titanium nitride, silicon oxy-nitride, silicon oxide, silicon nitride and photoresist materials.  
   
   
       11 . The conductive line structure of  claim 9 , further comprising a spacer located over the first portion of the conductive line and on sidewalls of the second portion of the conductive line and the mask layer.  
   
   
       12 . The conductive line structure of  claim 11 , wherein a material of the spacer is selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride and polymer materials.  
   
   
       13 . A conductive line structure comprising: 
 a first portion having a first line width; and    a second portion having a second line width and located over the first portion, wherein the first line width of the first portion is larger than the second line width of the second portion.    
   
   
       14 . The conductive line structure of  claim 13 , wherein a material of the first portion and the second portion is selected from the group consisting of doped polysilicon, aluminum, copper and alloys of aluminum and copper.  
   
   
       15 . The conductive line structure of  claim 13 , further comprising a mask layer located over the second portion.  
   
   
       16 . The conductive line structure of  claim 15 , wherein a material of the mask layer is selected from the group consisting of titanium/titanium nitride, silicon oxy-nitride, silicon oxide, silicon nitride and photoresist materials.  
   
   
       17 . The conductive line structure of  claim 13 , further comprising a spacer located on the first portion and on sidewalls of the second portion and the mask layer.  
   
   
       18 . The conductive line structure of  claim 17 , wherein a material of the spacer is selected from the group consisting of silicon oxide, silicon nitride, silicon oxy-nitride and polymer materials.