US2008075626A1PendingUtilityA1

Wire Bump Material

Assignee: TANAKA ELECTRONICS INDPriority: Sep 30, 2004Filed: Sep 29, 2005Published: Mar 27, 2008
Est. expirySep 30, 2024(expired)· nominal 20-yr term from priority
B23K 35/3013C22C 5/02H10W 72/07236H10W 72/07234H10W 72/5522H10W 72/01225H10W 72/952H10W 72/552H10W 72/252H10W 72/251H10W 72/241H10W 72/072H10W 72/59H10W 72/29H10W 72/015H10W 72/20
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Claims

Abstract

The present invention was held in order to resolve problems on above-mentioned conventional wire bumping material. This invention has the following purposes; (1) approximating Au—Ag alloy bumping balls to bond Al pads to ideal sphere shape (2) increasing assurance of Au—Ag alloy bump bonding to Al pads (3) shortening tail length of Au—Ag alloy bump (4) improving anti-Au consumption into solder (5) decreasing contamination of capillary tip by bump wire and hole around tip Means for resolution Au—Ag alloy for wire bumping comprising wherein Au, which purity is more than 99.99 mass %, comprising Au matrix and a particle of additive elements, consisting of 1 to 40 mass % Ag, which purity is more than 99.99 mass %.

Claims

exact text as granted — not AI-modified
1 . Au—Ag alloy bump comprising: 
 1-25 mass % of Ag of purity of 99.99 mass % or higher;    at least one of 5-50 mass ppm of Ca, 1-20 mass ppm of Be, and 5-90 mass ppm of rare earth element; and    the balance Au of purity of 99.99 mass % or higher.    
     
     
         2 . (canceled)  
     
     
         3 . Au—Ag alloy bump according to  claim 1 , further comprising 10 to 90 mass ppm of at least one element selected from a group consisting of Ge, Mg, Sr, Bi, Zn, Si, Ga, Sn, Sb, B and Li.  
     
     
         4 . Au—Ag alloy bump according to  claim 1 , further comprising 0.5-40 mass ppm one of B or Li.  
     
     
         5 . Au—Ag alloy bump according to  claim 1 ,  3  or  4 , wherein said bump comprises 5 to 25 mass % Ag.  
     
     
         6 . Au—Ag alloy bump according to  claim 1 ,  3 , or  4 , wherein said said rare earth element is at least one selected from the group of Y, La, Ce, Eu, Nd, Gd, and Sm.  
     
     
         7 . Au—Ag alloy bump according to  claim 1 ,  3 , or  4 , wherein said Au—Ag bump is bonded to Pb-based solder or Sn-based solder.  
     
     
         8 . Au—Ag alloy bump according to  claim 1 ,  3 , or  4 , wherein said Au—Ag bump is bonded to Pb-free Sn-based solder in flip chip bonding.  
     
     
         9 . Au—Ag alloy bump according to  claim 1 ,  3 , or  4 , wherein in said flip chip bonding, said Pb-free Sn-based solder has a melting point in a range of 170° C. to 260° C.

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