Rework process for removing residual uv adhesive from c4 wafer surfaces

Abstract

A method for the removal of residual UV radiation-sensitive adhesive from the surfaces of semiconductor wafers, remaining thereon from protective UV radiation-sensitive tapes which were stripped from the semiconductor wafers. Moreover, provided is an arrangement for implementing the removal of residual sensitive adhesive, which remain from tapes employed as protective layers on semiconductor wafers, particularly wafers having surfaces including C4 connections.

1 - 12 . (canceled)  
   
   
       13 . An arrangement for the removal of residual UV adhesive deposits from the surface of a semiconductor wafer, said arrangement comprising: 
 a vacuum chamber containing a pressure-sensitive UV cure tape in close parallel position with said surface of the semiconductor wafer;    a subatmospheric vacuum condition being formed in said vacuum chamber so as to cause said pressure-sensitive UV tape to engage said semiconductor wafer surface in close surface contact;    means for treating of said UV cure tape so as to reduce tacking thereof with said semiconductor wafer surface; and    said UV cure tape being peeled from said semiconductor wafer surface, wherein said adhesive deposits remain adherent to said tape and are removed from said semiconductor wafer surface in conjunction with the peeling off of said tape.    
   
   
       14 . An arrangement, as claimed in  claim 13 , wherein said UV cure tape is treated with a 10% IPA solution during application to the surface of said semiconductor wafer.  
   
   
       15 . An arrangement, as claimed in  claim 13 , wherein said UV cure tape is applied to the front surface of said semiconductor wafer so as to closely adhere to electronic components and C4 connections arranged on said front surface for removing said adhesive residue deposits remaining on said surface, components and C4 connections from preceding protective tapes, which were applied during processing of the backside of said semiconductor wafer.  
   
   
       16 . An arrangement, as claimed in  claim 15 , wherein said processing of the backside comprises grinding said back surface of the semiconductor wafer for the thinning of said wafer.  
   
   
       17 . An arrangement, as claimed in  claim 13 , wherein said tape comprises a UV cure tape which is applied to the front surface of said wafer.  
   
   
       18 . An arrangement, as claimed in  claim 13 , wherein a UV cure tape is repeatedly applied a plurality of times to said wafer front surface for effectuating a complete removal, as required, of said adhesive residue deposits from said wafer surface.  
   
   
       19 . An arrangement, as claimed in  claim 13 , wherein said front surface is subjected to a cleaning with N 2  gas after the peeling off of said UV cure tape from said surface.