Capacitance dielectric layer, capacitor and forming method thereof

Abstract

A capacitance dielectric layer is provided. The capacitance dielectric layer includes a first dielectric layer, a second dielectric layer and a silicon nitride stacked layer. The silicon nitride stacked layer is disposed between the first dielectric layer and the second dielectric layer. The structure of the capacitance dielectric layer permits an increase in the capacitance per unit area by decreasing the thickness of the capacitance dielectric layer and eliminates the problems of having a raised leakage current and a diminished breakdown voltage.

1 - 10 . (canceled)  
     
     
         11 . A method of forming a capacitance dielectric layer, comprising: 
 forming a silicon nitride stacked layer over a first dielectric layer; and    forming a second dielectric layer over the silicon nitride stacked layer.    
     
     
         12 . The capacitance dielectric layer of  claim 11 , wherein the method of forming the silicon nitride stacked layer comprises: 
 performing a chemical vapor deposition process to form a first silicon nitride layer over a first dielectric layer; and    performing another chemical vapor deposition process to form a second silicon nitride layer over the first silicon nitride layer.    
     
     
         13 . The method of  claim 12 , wherein the method of forming the silicon nitride stacked layer comprises performing chemical vapor deposition processes consecutively a number of times.  
     
     
         14 . The method of  claim 11 , wherein the method of forming the first dielectric layer and the second dielectric layer comprises performing a chemical vapor deposition process.  
     
     
         15 . The method of  claim 11 , wherein the first dielectric layer, the second dielectric layer, the silicon nitride stacked layer are formed in the same reaction chamber.  
     
     
         16 . The method of  claim 11 , wherein the first dielectric layer, the second dielectric layer, the silicon nitride stacked layer are formed in different reaction chambers.  
     
     
         17 . The method of  claim 11 , wherein the first dielectric layer and the second dielectric layer are fabricated using a material selected from a group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbon nitride and silicon carbon oxide.  
     
     
         18 . The method of  claim 11 , wherein before forming the silicon nitride stacked layer, Her comprises forming a third dielectric layer over the first dielectric layer.  
     
     
         19 . The method of  claim 18 , wherein the third dielectric layer is fabricated using a material selected from a group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbon nitride and silicon carbon oxide.  
     
     
         20 . The method of  claim 11 , wherein after forming the silicon nitride stacked layer but before forming the second dielectric layer, further comprises forming a fourth dielectric layer over the silicon nitride stacked layer.  
     
     
         21 . The method of  claim 20 , wherein the fourth dielectric layer is fabricated using a material selected from a group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbon nitride and silicon carbon oxide.  
     
     
         22 . The method of  claim 20 , wherein after forming the first dielectric layer but before forming the silicon nitride stacked layer, further comprises forming a fifth dielectric layer over the first dielectric layer.  
     
     
         23 . The method of  claim 22 , wherein the fifth dielectric layer is fabricated using a material selected from a group consisting of silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbon nitride and silicon carbon oxide.  
     
     
         24 - 35 . (canceled)