Inventor · disambiguated record
Yu-Ho Chiang
Also filed as: CHIANG YU-HO
7 granted patents·3 pending applications·17 citations·filing 2006–2023
79Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD3LIANG VICTOR CHIANG2UNITED MICROELECTRONICS CORP2CHIANG YU-HO1LIEN WAI-YI1
Top patents by PatentIndex Score
10 records- 0183US10868184B2Fin field effect transistor (FinFET) device structure with hard mask layer over gate structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·3 cites·20 claims
- 0277US8114752B2Structure of capacitor setLIANG VICTOR CHIANG·Filed 2010·Granted Feb 14, 2012·5 cites·20 claims
- 0367US8928110B2Dummy cell pattern for improving device thermal uniformityLIEN WAI-YI·Filed 2011·Granted Jan 6, 2015·5 cites·10 claims
- 0460US8133792B2Method for reducing capacitance variation between capacitorsLIANG VICTOR-CHIANG·Filed 2006·Granted Mar 13, 2012·2 cites·26 claims
- 0558US2025142881A1Semiconductor structure including bottom isolation and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0655US7745280B2Metal-insulator-metal capacitor structureUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jun 29, 2010·2 cites·17 claims
- 0749US11011636B2Fin field effect transistor (FinFET) device structure with hard mask layer over gate structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 18, 2021·0 cites·20 claims
- 0846US7872292B2Capacitance dielectric layer and capacitorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jan 18, 2011·0 cites·18 claims
- 0943US2008113481A1Capacitance dielectric layer, capacitor and forming method thereofWANG CHIH-CHUN·Filed 2008·Application pending·0 cites
- 1037US2012256273A1Method of unifying device performance within dieCHIANG YU-HO·Filed 2011·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Yu-Ho Chiang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →