gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials

Abstract

A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.

1 . A substrate processing apparatus comprising:
 a substrate support configured to support a substrate within a processing chamber;   a gas delivery system configured to receive a silicon-containing precursor, a hydroxyl-containing precursor and an oxidizing processing gas and deliver them to the processing chamber; and   a controller configured to control the gas delivery system and the substrate support, wherein the controller introduces the silicon-containing precursor, the hydroxyl-containing precursor and oxidizing processing gas into the processor chamber to form a dielectric layer on the substrate, and alter the position of the substrate support relative to the gas delivery system during the deposition of the dielectric layer.   
   
   
       2 . The substrate processing chamber of  claim 1 , wherein the controller varies the concentration of the silicon-containing precursor to the oxidizing processing gas over time during the deposition of the dielectric layer on the substrate, as the silicon-containing precursor gas is continuously flowed into the chamber. 
   
   
       3 . The substrate processing chamber of  claim 1 , wherein the controller moves the substrate support closer to the gas delivery system during the deposition of the dielectric layer to increase a deposition rate for the dielectric layer. 
   
   
       4 . The substrate processing chamber of  claim 1 , wherein the gas delivery system comprises separate channels to deliver the silicon-containing precursor and the hydroxyl-containing precursor to the processing chamber. 
   
   
       5 . The substrate processing chamber of  claim 1 , wherein the silicon-containing precursor comprises tetraethylorthosilicate (TEOS), the hydroxyl-containing precursor comprises H 2 O, and the oxidizing processing gas comprises ozone.