Method and structure of pattern mask for dry etching

Abstract

The present invention provides a structure for etching process. The structure has a mask for protecting an area of a wafer from being etched and a seal ring attached under a lower surface of the mask. The mask has at least one air opening to expose an area to be etched. Furthermore, the mask is attached on the wafer through the seal ring. In addition, the present invention provides also a method to form a mask for dry etching process. First, the present invention includes a step of providing a base material and coating the masking material on both sides of the base material. The next step is to pattern the masking material to form openings. Subsequently, the base material is etched through the openings to create at least one mask opening and a mask cavity. Finally, removing the mask material is performed.

1 . A structure for etching, comprising:
 a mask for protecting an area of a wafer from being etched, wherein said mask has at least one air opening to expose an area to be etched; and   a seal ring attached under a lower surface of said mask and surrounding said area of the wafer from being etched, wherein said mask is attached on said wafer through said seal ring.   
     
     
         2 . The structure for etching in  claim 1 , wherein said seal ring includes elastic material. 
     
     
         3 . The structure for etching in  claim 2 , wherein said elastic material includes silicone resin, elastic PU, porous PU, acrylic rubber, blue tape, UV tape, polyimide (PI), polyester (PET) or polypropylene (BOPP). 
     
     
         4 . The structure for etching in  claim 1 , wherein said mask includes nonconductive or conductive material. 
     
     
         5 . The structure for etching in  claim 1 , further comprising a buffer layer attached between said mask and said seal ring. 
     
     
         6 . A structure for etching, comprising:
 a mask for protecting an area of a wafer from being etched, wherein said mask has at least one air opening to expose an area to be etched; and   wherein a cavity is generated above a pixels array of said wafer and surrounding said pixels array of the wafer from being etched when said mask is directly attached on said wafer.   
     
     
         7 . The structure for etching in  claim 6 , further comprising a seal ring formed under a lower surface of said mask. 
     
     
         8 . The structure for etching in  claim 7 , wherein said seal ring includes elastic material. 
     
     
         9 . The structure for etching in  claim 8 , wherein said elastic material includes silicone resin, elastic PU, porous PU, acrylic rubber, blue tape, UV tape, polyimide (PI), polyester (PET) or polypropylene (BOPP). 
     
     
         10 . The structure for etching in  claim 6 , wherein said mask includes nonconductive or conductive material. 
     
     
         11 - 13 . (canceled)