Divergent Charged Particle Implantation for Improved Transistor Symmetry

Abstract

The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles ( 320 ) to a substrate ( 330 ), the beam of charged particles ( 320 ) having a given beam divergence, and forming a diverged beam of charged particles ( 360 ) by subjecting the beam of charged particles ( 320 ) to an energy field ( 350 ), thereby causing the beam of charged particles ( 320 ) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles ( 360 ) into the substrate ( 330 ).

1 . A method for implanting charged particles in a substrate, comprising:
 projecting a beam of charged particles to a substrate, the beam of charged particles having a given beam divergence;   forming a diverged beam of charged particles by subjecting the beam of charged particles to an energy field, thereby causing the beam of charged particles to have a larger beam divergence; and   implanting the diverged beam of charged particles into the substrate.   
   
   
       2 . The method as recited in  claim 1  wherein the given beam divergence is about zero making the beam of charged particles substantially collimated. 
   
   
       3 . The method as recited in  claim 1  wherein the beam of charged particles is a low energy beam of charged particles having an energy of about 20 KeV or less. 
   
   
       4 . The method as recited in  claim 1  wherein the beam of charged particles is a low energy beam of charged particles having an energy of about 15 KeV or less. 
   
   
       5 . The method as recited in  claim 1  wherein the beam of charged particles is a low energy beam of charged particles having an energy of about 8 KeV or less. 
   
   
       6 - 20 . (canceled)