US2008150095A1PendingUtilityA1
Semiconductor device package
Est. expirySep 20, 2024(expired)· nominal 20-yr term from priority
H10W 90/754H10W 76/60H10W 42/20H10W 76/132
45
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Claims
Abstract
A semiconductor device package includes a semiconductor device mounted to a substrate, a wall erected around the semiconductor device with a height taller than the height of the semiconductor device, at least one metal member provided in the wall or against the wall; and a lid secured to the metal member. The metal member and the lid enclose substantially the semiconductor device for providing electromagnetic interference shielding.
Claims
exact text as granted — not AI-modified1 . A semiconductor device package comprising:
a substrate; a semiconductor device mounted to the substrate and electrically coupled to the substrate; at least one metal member provided in the substrate; and a metal cover secured to the metal member thereby enclosing substantially the semiconductor device for providing electromagnetic interference shielding.
2 . The semiconductor device package as claimed in claim 1 , wherein the metal member extends from an upper surface to a lower surface of the substrate.
3 . The semiconductor device package as claimed in claim 1 , wherein the metal member is connected to ground potential.
4 . The semiconductor device package as claimed in claim 1 , wherein the metal member is a metal ring.
5 . The semiconductor device package as claimed in claim 1 , wherein the metal member comprises a plurality of metal bars arranged around the semiconductor device.
6 . The semiconductor device package as claimed in claim 1 , wherein the substrate is an organic substrate or a ceramic substrate.
7 . The semiconductor device package as claimed in claim 1 , the metal cover is secured to the metal member by a soldering interface.
8 . The semiconductor device package as claimed in claim 1 , wherein the metal cover has a top portion and a side wall extending from the top portion, and the top portion of the metal cover comprises a solder layer or a black-oxidation layer formed thereon.
9 . A semiconductor device package comprising:
a substrate having a top portion and a bottom portion; and a semiconductor device mounted to the top portion of the substrate and electrically coupled to the substrate; and a metal cover having a base portion and a side wall extending from the base portion, the metal cover being secured to the substrate for providing electromagnetic interference shielding, wherein the size of the side wall is slightly larger than the size of the top portion of the substrate to enable the top portion of the substrate to be received within the metal cover, and the side wall of the metal cover abuts the bottom portion of the substrate when the top portion of the substrate is received within the metal cover.
10 . The semiconductor device package as claimed in claim 9 , wherein the substrate is an organic substrate or a ceramic substrate.
11 . The semiconductor device package as claimed in claim 9 , further comprising a solder layer or a black-oxidation layer formed on the base portion of the metal cover.Cited by (0)
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