Semiconductor device comprising multilayer dielectric film and related method

Abstract

A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.

1 . A semiconductor device comprising:
 a multilayer dielectric film disposed on a semiconductor substrate, wherein the multilayer dielectric film comprises:
 a first type-one dielectric film having a tetragonal crystalline structure, wherein the first type-one dielectric film comprises a first substance; and, 
 a first type-two dielectric film also having a tetragonal crystalline structure, wherein the first type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the first type-two dielectric film is greater than a dielectric constant of the first type-one dielectric film. 
   
   
   
       2 . The semiconductor device of  claim 1 , wherein the tetragonal crystalline structure of the first type-one dielectric film and at least a portion of the tetragonal crystalline structure of the first type-two dielectric film form one continuous crystalline structure. 
   
   
       3 . The semiconductor device of  claim 1 , wherein:
 the first type-one dielectric film is a zirconium oxide film; and,   the first type-two dielectric film is a hafnium oxide film.   
   
   
       4 . The semiconductor device of  claim 1 , wherein the first type-one dielectric film is thicker than the first type-two dielectric film. 
   
   
       5 . The semiconductor device of  claim 1 , wherein the multilayer dielectric film further comprises a second type-two dielectric film disposed on the first type-one dielectric film, wherein the first type-one dielectric film is disposed on the first type-two dielectric film. 
   
   
       6 . The semiconductor device of  claim 1 , wherein the multilayer dielectric film further comprises a second type-one dielectric film disposed on the first type-two dielectric film, wherein the first type-two dielectric film is disposed on the first type-one dielectric film. 
   
   
       7 . The semiconductor device of  claim 1 , wherein the multilayer dielectric film further comprises:
 a plurality of type-one dielectric films comprising the first type-one dielectric film; and   a plurality of type-two dielectric films comprising the first type-two dielectric film,   wherein the type-one dielectric films and the type-two dielectric films are alternately disposed on the semiconductor substrate.   
   
   
       8 . The semiconductor device of  claim 1 , further comprising:
 a first electrode disposed on the semiconductor substrate; and,   a second electrode disposed on the multilayer dielectric film,   wherein the multilayer dielectric film is disposed on the first electrode, and   wherein the first electrode, the second electrode, and the multilayer dielectric film form a capacitor.   
   
   
       9 . A method for fabricating a semiconductor device comprising a multilayer dielectric film disposed on a semiconductor substrate, the method comprising:
 forming a first type-one dielectric film on the semiconductor substrate, wherein the first type-one dielectric film comprises a first substance and has a tetragonal crystalline structure;   forming a preliminary first type-two dielectric film on the semiconductor substrate; and   heat treating the first type-one dielectric film and the preliminary first type-two dielectric film to form a first type-two dielectric film on the semiconductor substrate, wherein the first type-two dielectric film also has a tetragonal crystalline structure and comprises a second substance different from the first substance,   wherein the first type-two dielectric film has a greater dielectric constant than the first type-one dielectric film, and   wherein the multilayer dielectric film comprises the first type-one dielectric film and the first type-two dielectric film.   
   
   
       10 . The method of  claim 9 , wherein, before heat treating the first type-one dielectric film and the preliminary first type-two dielectric film, a first portion of the preliminary first type-two dielectric film has a tetragonal crystalline structure and a second portion of the preliminary first type-two dielectric film is amorphous. 
   
   
       11 . The method of  claim 10 , wherein:
 forming the preliminary first type-two dielectric film on the semiconductor substrate comprises forming the preliminary first type-two dielectric film on the first type-one dielectric film; and   forming the preliminary first type-two dielectric film on the first type-one dielectric film comprises growing the first portion of the preliminary first type-two dielectric film from the tetragonal crystalline structure of the first type-one dielectric film.   
   
   
       12 . The method of  claim 9 , wherein forming the first type-one dielectric film on the semiconductor substrate comprises forming the first type-one dielectric film on the preliminary first type-two dielectric film, wherein, while forming the first type-one dielectric film on the preliminary first type-two dielectric film, a tetragonal crystalline structure grows in a portion of the preliminary first type-two dielectric film from the tetragonal crystalline structure of the first type-one dielectric film. 
   
   
       13 . The method of  claim 9 , wherein heat treating the first type-one dielectric film and the preliminary first type-two dielectric film comprises performing rapid thermal annealing in an atmosphere comprising at least one of Ar and O 2  at a temperature of about 300 to 700° C. for about 30 sec to  5 Z min. 
   
   
       14 . The method of  claim 9 , wherein heat treating the first type-one dielectric film and the preliminary first type-two dielectric film comprises:
 performing a plasma heat treatment process at a temperature of about 25 to 400° C. for about 5 to 60 min; or,   performing a vacuum heat treatment process at a temperature of about 300 to 700° C.   
   
   
       15 . The method of  claim 9 , wherein:
 the first type-one dielectric film is a zirconium oxide film; and   the first type-two dielectric film is a hafnium oxide film.   
   
   
       16 . The method of  claim 9 , wherein the first type-one dielectric film is thicker than the first type-two dielectric film. 
   
   
       17 . The method of  claim 9 , wherein the first type-one dielectric film is formed using atomic layer deposition (ALD). 
   
   
       18 . The method of  claim 9 , further comprising:
 forming a preliminary second type-two dielectric film on the semiconductor substrate,   wherein heat treating the first type-one dielectric film and the preliminary first type-two dielectric film to form the first type-two dielectric film on the semiconductor substrate comprises heat treating the first type-one dielectric film, the preliminary first type-two dielectric film, and the preliminary second type-two dielectric film to form the first type-two dielectric film and a second type-two dielectric film on the semiconductor substrate, and   wherein the multilayer dielectric film further comprises the second type-two dielectric film.   
   
   
       19 . The method of  claim 9 , further comprising:
 forming a second type-one dielectric film on the preliminary first type-two dielectric film; and   forming a preliminary second type-two dielectric film on the second type-one dielectric film,   wherein forming the preliminary first type-two dielectric film on the semiconductor substrate comprises forming the preliminary first type-two dielectric film on the first type-one dielectric film,   wherein heat treating the first type-one dielectric film and the preliminary first type-two dielectric film to form the first type-two dielectric film on the semiconductor substrate comprises heat treating the first type-one dielectric film, the preliminary first type-two dielectric film, the second type-one dielectric film, and the preliminary second type-two dielectric film to form the first type-two dielectric film from the preliminary first type-two dielectric film and to form a second type-two dielectric film from the preliminary second type-two dielectric film.   
   
   
       20 . The method of  claim 9 , further comprising:
 forming a preliminary second type-two dielectric film on the first type-one dielectric film; and   forming a second type-one dielectric film on the preliminary second type-two dielectric film,   wherein forming the first type-one dielectric film on the semiconductor substrate comprises forming the first type-one dielectric film on the preliminary first type-two dielectric film, and   wherein heat treating the first type-one dielectric film and the preliminary first type-two dielectric film to form the first type-two dielectric film on the semiconductor substrate comprises heat treating the first type-one dielectric film, the preliminary first type-two dielectric film, the second type-one dielectric film, and the preliminary second type-two dielectric film to form the first type-two dielectric film from the preliminary first type-two dielectric film and to form the second type-two dielectric film from the preliminary second type-two dielectric film.   
   
   
       21 . The method of  claim 9 , further comprising:
 forming a first electrode on the semiconductor substrate; and,   forming a second electrode on the multilayer dielectric film to form a capacitor comprising the first electrode, the second electrode, and the multilayer dielectric film,   wherein the multilayer dielectric film is disposed on the first electrode.