Inventor · disambiguated record
Eun-Ae Chung
Also filed as: CHUNG EUN-AE
23 granted patents·10 pending applications·135 citations·filing 2001–2015
95Inventor score
Top patents by PatentIndex Score
33 records- 0190US9564435B2Semiconductor device including FinFETs having different gate structures and method of manufacturing the semiconductor deviceCHUNG EUN-AE·Filed 2015·Granted Feb 7, 2017·16 cites·28 claims
- 0287US9368589B2Semiconductor device and semiconductor moduleSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 14, 2016·10 cites·25 claims
- 0382US7514315B2Methods of forming capacitor structures having aluminum oxide diffusion barriersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 7, 2009·8 cites·8 claims
- 0481US7759718B2Method manufacturing capacitor dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·7 cites·1 claims
- 0581US7655519B2Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 2, 2010·9 cites·19 claims
- 0678US6815221B2Method for manufacturing capacitor of semiconductor memory device controlling thermal budgetSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 9, 2004·23 cites·67 claims
- 0776US7838438B2Dielectric layer, method of manufacturing the dielectric layer and method of manufacturing capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 23, 2010·5 cites·16 claims
- 0874US7791125B2Semiconductor devices having dielectric layers and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·4 cites·7 claims
- 0971US7485585B2Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 3, 2009·3 cites·17 claims
- 1069US8119486B2Methods of manufacturing semiconductor devices having a recessed-channelKIM YOUNG-PIL·Filed 2011·Granted Feb 21, 2012·3 cites·20 claims
- 1167US7824501B2In-situ method of cleaning vaporizer during dielectric layer deposition processSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 2, 2010·2 cites·15 claims
- 1266US7750385B2Semiconductor interconnection structures and capacitors including poly-SiGe layers and metal contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 6, 2010·2 cites·4 claims
- 1365US7939872B2Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric filmsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 10, 2011·2 cites·21 claims
- 1464US6858529B2Methods of forming contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorusSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 22, 2005·9 cites·32 claims
- 1561US9443735B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 13, 2016·1 cites·11 claims
- 1658US8110473B2Semiconductor device comprising multilayer dielectric film and related methodKANG SANG-YEOL·Filed 2009·Granted Feb 7, 2012·2 cites·12 claims
- 1758US7312130B2Methods of forming capacitor structures including L-shaped cavitiesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 25, 2007·9 cites·22 claims
- 1858US6472319B2Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatmentSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 29, 2002·6 cites·48 claims
- 1957US7153750B2Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 26, 2006·7 cites·21 claims
- 2053US2010117194A1Metal-insulator-metal capacitors with a chemical barrier layer in a lower electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 2152US6683001B2Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressedSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 27, 2004·3 cites·22 claims
- 2250US6927166B2Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressedSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 9, 2005·2 cites·12 claims
- 2350US2009195962A1Multilayer electrode structures including capacitor structures having aluminum oxide diffusion barriersSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 2449US7176533B2Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorusSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 13, 2007·2 cites·14 claims
- 2546US2005081787A1Apparatus and method for supplying a source, and method of depositing an atomic layer using the sameFiled 2004·Application pending·0 cites
- 2646US2008203529A1Semiconductor device comprising multilayer dielectric film and related methodSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2744US2007098892A1Method of forming a layer and method of manufacturing a capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2843US2007032013A1Methods of forming a metal oxide layer including zirconium oxide and methods of forming a capacitor for semiconductor devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2940US2008087930A1Capicitor Using Binary Metal Electrode, Semiconductor Device Having The Capacitor And Method of Fabricating The SameLEE JONG-CHEOL·Filed 2007·Application pending·0 cites
- 3040US2014035058A1Semiconductor Devices and Methods of Manufacturing the SameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3135US2008054244A1Phase change memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3232US6953741B2Methods of fabricating contacts for semiconductor devices utilizing a pre-flow processSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 11, 2005·0 cites·14 claims
- 3332US2015228722A1Semiconductor device including fin-type field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →