Electronic components on trenched substrates and method of forming same

Abstract

A method of mounting an electronic component on a substrate includes forming at least one trench in a surface of the substrate. The trenches formed in the substrate reduce a stiffness of the substrate, which provides less resistance to shear. Accordingly, the trenches reduce the amount of strain on the joints, which mount the electronic component to the substrate, which enhances the life of the joints.

1 . A method of mounting an electronic component on a substrate, comprising:
 forming at least one structure that reduces stress flow through the substrate,   wherein said structure comprises at least one trench in a surface of the substrate, said at least one trench being formed around a plurality of capacitor legs, said capacitor legs mounting the electronic component to the substrate.   
     
     
         2 . (canceled) 
     
     
         3 . (canceled) 
     
     
         4 . The method in accordance with  claim 1 , wherein said at least one trench comprises:
 a first trench formed around a first row of capacitor legs; and   a second trench formed around a second row of capacitor legs.   
     
     
         5 . The method in accordance with  claim 1 , further comprising forming a plurality of trench extension slits extending from each of said trenches and extending between a plurality of capacitor legs of said first row of capacitor legs and said second row of capacitor legs. 
     
     
         6 . The method in accordance with  claim 1 , wherein said at least one trench comprises a continuous trench. 
     
     
         7 . The method in accordance with  claim 1 , further comprising forming a plurality of trenches in said surface of said substrate. 
     
     
         8 . The method in accordance with  claim 7 , wherein said plurality of trenches comprises a plurality of continuous trenches formed around a plurality of capacitor legs. 
     
     
         9 . The method in accordance with  claim 7 , wherein said plurality of trenches comprises a plurality of individual trenches, said individual trenches being formed around a plurality of capacitor legs. 
     
     
         10 . The method in accordance with  1 , wherein said at least one trench has a depth of approximately 15 μm or greater. 
     
     
         11 . The method in accordance with  claim 1 , wherein said at least one trench has a width of approximately 200 μm. 
     
     
         12 - 20 . (canceled)