Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films

Abstract

The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H 3 , preferably of the formula (R 1 R 2 N)SiH 3 wherein R 1 and R 2 are selected independently from C 2 to C 10 and a nitrogen or oxygen source, preferably ammonia or oxygen has been developed to provide films with improved properties such as etching rate, hydrogen concentrations, and stess as compared to films from thermal chemical vapor deposition.

1 . A process to deposit silicon nitride, silicon carbonitride, silicon oxynitride, and silicon carboxynitride on a semi-conductor substrate comprising:
 a. contacting a nitrogen-containing source with a heated substrate under remote plasma conditions to absorb at least a portion of the nitrogen-containing source on the heated substrate,   b. purging away any unabsorbed nitrogen-containing source,   c. contacting the heated substrate with a silicon-containing source having one or more Si—H 3  fragments to react with the absorbed nitrogen-containing source, wherein the silicon-containing source has one or more H 3 Si—NR 0   2  (R 0 ═SiH 3 , R, R 1  or R 2 , defined below) groups selected from the group consisting of one or more of:   
       
         
           
           
               
               
           
         
         
           wherein R and R 1  in the formulas represent aliphatic groups having from 2 to 10 carbon atoms, wherein R and R 1  in formula A may also be a cyclic group, and R 2  selected from the group consisting of a single bond, (CH 2 ) n , a ring, or SiH 2 , and 
         
         d. purging away the unreacted silicon-containing source. 
       
     
     
         2 . The process of  claim 1  wherein the process is repeated until a desired thickness of film is established. 
     
     
         3 . The process of  claim 1  is an atomic layer deposition. 
     
     
         4 . The process of  claim 1  is a plasma enhanced cyclic chemical vapor deposition. 
     
     
         5 . The process of  claim 1  wherein the substrate temperature is in the range of 200 to 600° C. 
     
     
         6 . The process of  claim 1  wherein the silicon-containing source having one or more Si—H 3  fragments is selected from the group consisting of diethylaminosilane (DEAS), di-iso-propylaminosilane(DIPAS), di-tert-butylaminosilane (DTBAS), di-sec-butylaminosilane, di-tert-pentylamino silane and mixtures thereof. 
     
     
         7 . The process of  claim 1  wherein the nitrogen-containing source is selected from the group consisting of nitrogen, ammonia, hydrazine, monoalkylhydrozine, dialkylhydrozine, and mixture thereof. 
     
     
         8 . A process to deposit silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide on a semi-conductor substrate comprising:
 a. contacting a oxygen-containing source with a heated substrate under remote plasma conditions to absorb at least a portion of the oxygen-containing source on the heated substrate,   b. purging away any unabsorbed oxygen-containing source,   c. contacting the heated substrate with a silicon-containing source having one or more Si—H 3  fragments to react with the absorbed oxygen-containing source, wherein the silicon-containing source has one or more H 3 Si—NR 0   2  (R 0 ═SiH 3 , R, R 1  or R 2 , defined below) groups selected from the group consisting of one or more of:   
       
         
           
           
               
               
           
         
         
           wherein R and R 1  in the formulas represent aliphatic groups having from 2 to 10 carbon atoms, wherein R and R 1  in formula A may also be a cyclic group, and R 2  selected from the group consisting of a single bond, (CH 2 ) n , a ring, or SiH 2 , and 
         
         d. purging away the unreacted silicon-containing source. 
       
     
     
         9 . The process of  claim 8  wherein the process is repeated until a desired thickness of film is established. 
     
     
         10 . The process of  claim 8  is an atomic layer deposition. 
     
     
         11 . The process of  claim 8  is a plasma enhanced cyclic chemical vapor deposition. 
     
     
         12 . The process of  claim 8  wherein the substrate temperature is in the range of 200 to 600° C. 
     
     
         13 . The process of  claim 8  wherein the silicon-containing source having one or more Si—H 3  fragments is selected from the group consisting of diethylaminosilane (DEAS), di-iso-propylaminosilane(DIPAS), di-tert-butylaminosilane (DTBAS), di-sec-butylaminosilane, di-tert-pentylamino silane and mixtures thereof. 
     
     
         14 . The process of  claim 8  wherein the oxygen-containing source is selected from the group consisting of oxygen, nitrous oxide, ozone, and mixture thereof.