Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method

Abstract

The precoat film forming method has the deposition step of feeding processing gas into the film forming device having the loading table structure 18 internally which has the loading table 16 for loading the article W to be processed and depositing the precoat film 22 composed of a TiN film on the surface of the loading table and the stabilization step of exposing and stabilizing the precoat film in NH 3 (ammonia) containing gas by keeping the loading table at a temperature higher than the temperature at the deposition step. By doing this, the precoat film is stabilized, thereby even during a period of idling, there is no need to lower the temperature of the loading table and the throughput can be improved. Further, the film forming method for depositing a predetermined film on the surface of the article W to be processed using high-melting point metallic compound gas and reducing gas in the processing container 4 which can be evacuated feeds oxidizing gas into the processing container during or immediately after the film forming process. By doing this, the sheet resistance can be greatly prevented from a change with time.

1 - 16 . (canceled) 
     
     
         17 . A film forming method comprising:
 a film forming process of depositing a predetermined film by a thermal CVD on a surface of an object to be processed using high-melting point metallic compound gas, and reducing gas in a processing container which can be evacuated,   wherein oxidizing gas is fed into said processing container during said film forming process.   
     
     
         18 . A film forming method according to  claim 17 ,
 wherein a flow rate of the oxidizing gas is within a range of 7 to 67% with respect to a flow rate of the high-melting point metallic compound gas.   
     
     
         19 . A film forming method according to  claim 17 ,
 wherein the oxidizing gas is O 2  or H 2 O.   
     
     
         20 . A film forming method according to  claim 17 ,
 wherein the high-melting point metallic compound gas is a TiCl 4  gas, and the reducing gas is a NH 3  gas.   
     
     
         21 . A film forming method comprising,
 a film forming process of depositing a predetermined film by a thermal CVD on a surface of an object to be processed using high-melting point metallic compound gas and reducing gas in a processing container which can be evacuated,   wherein oxidizing gas is fed into said processing container immediately after said film forming process under a condition in which the object to be processed remains in said processing container.   
     
     
         22 . A film forming method according to  claim 21 ,
 wherein a process temperature at said film forming process and a process temperature at a step of feeding the oxidizing gas are the same.   
     
     
         23 . A film forming method according to  claim 22 ,
 wherein a process time period for the step of feeding the oxidizing gas is within a range of 5 to 30 seconds.   
     
     
         24 . A film forming method according to  claim 21 ,
 wherein a flow rate of the oxidizing gas is within a range of 7 to 67% with respect to a flow rate of the high-melting point metallic compound gas.   
     
     
         25 . A film forming method according to  claim 21 ,
 wherein the oxidizing gas is O 2  or H 2 O.   
     
     
         26 . A film forming method according to  claim 21 ,
 wherein the high-melting point metallic compound gas is a TiCl 4  gas, and the reducing gas is a NH 3  gas.