Absorber layer for dsa processing

Abstract

A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.

1 . A method of processing a substrate, comprising:
 depositing a layer comprising amorphous carbon on the substrate; and then   annealing the substrate, wherein the annealing comprises scanning the substrate with pulses of electromagnetic radiation.   
     
     
         2 . The method of  claim 1 , wherein the annealing the substrate heats a top surface layer of the substrate underneath the layer comprising amorphous carbon to a temperature between about 1100° C. and about 1410° C. 
     
     
         3 . The method of  claim 2 , wherein the layer comprising amorphous carbon is deposited from a mixture comprising C 3 H 6 . 
     
     
         4 . The method of  claim 1 , further comprising removing the layer comprising amorphous carbon from the substrate after the annealing. 
     
     
         5 . The method of  claim 1 , further comprising implanting dopant ions into the substrate before the depositing a layer comprising amorphous carbon. 
     
     
         6 . The method of  claim 5 , further comprising forming a gate source area and a gate drain area in the substrate before the implanting. 
     
     
         7 . The method of  claim 6 , wherein the substrate is annealed for a period of time sufficient to activate the implanted dopant ions. 
     
     
         8 . The method of  claim 1 , wherein the layer comprising amorphous carbon further comprises a material selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. 
     
     
         9 . The method of  claim 8 , wherein the material is nitrogen. 
     
     
         10 . The method of  claim 8 , wherein the layer comprising amorphous carbon is deposited at a temperature between about 400° C. and about 500° C. 
     
     
         11 . The method of  claim 8 , wherein the layer comprising amorphous carbon is deposited by plasma enhanced chemical vapor deposition. 
     
     
         12 . The method of  claim 8 , further comprising removing the layer comprising amorphous carbon from the substrate after the annealing. 
     
     
         13 . The method of  claim 8 , further comprising implanting dopant ions into the substrate before the depositing a layer comprising amorphous carbon. 
     
     
         14 . A substrate, processed by a method comprising:
 depositing a layer comprising amorphous carbon on the substrate; and then   annealing the substrate, wherein the annealing comprises scanning the substrate with pulses of electromagnetic radiation.   
     
     
         15 . The substrate of  claim 14 , wherein the annealing the substrate heats a top surface layer of the substrate underneath the layer comprising amorphous carbon to a temperature between about 1100° C. and about 1410° C. 
     
     
         16 . The substrate of  claim 14 , wherein the layer comprising amorphous carbon further comprises a material selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. 
     
     
         17 . The substrate of  claim 14 , wherein the layer comprising amorphous carbon further comprises nitrogen. 
     
     
         18 . The substrate of  claim 14 , wherein the method further comprises implanting dopant ions into the substrate before the depositing a layer comprising amorphous carbon. 
     
     
         19 . The substrate of  claim 18 , further comprising forming a gate source area and a gate drain area in the substrate before the implanting. 
     
     
         20 . The substrate of  claim 19 , wherein the substrate is annealed for a period of time sufficient to activate the implanted dopant ions.