Method and apparatus for selective electrofilling of through-wafer vias

Abstract

A device for electrodepositing a conductive material from a first solution into at least one feature formed on a wafer includes a hollow body, an electrode, and a moving mechanism. The hollow body includes a first opening and a second opening. The first solution is supplied to the second opening and injected from the first opening. The electrode is disposed within the hollow body. A potential difference is applicable between the first electrode and the surface of the wafer to electrodeposit the conductive material into the at least one feature. The moving mechanism is mechanically coupled to the hollow body. The moving mechanism is configured to position the first opening of the hollow body over the at least one feature.

1 . A device for electrodepositing a conductive material from a first solution into at least one feature formed on a wafer, the device comprising:
 a hollow body including a first opening and a second opening, the first solution being supplied to the second opening and injected from the first opening;   an electrode disposed within the hollow body, wherein a potential difference is applicable between the first electrode and the surface of the wafer to electrodeposit the conductive material into the at least one feature; and   a moving mechanism mechanically coupled to the hollow body, the moving mechanism configured to position the first opening of the hollow body over the at least one feature.   
     
     
         2 . The device of  claim 1 , further comprising a power supply in electrical communication with the electrode and the surface of the wafer. 
     
     
         3 . The device of  claim 1 , wherein the moving mechanism comprises a stage movable in at least two dimensions. 
     
     
         4 . The device of  claim 1 , further comprising a controller configured to control movement of the moving mechanism. 
     
     
         5 . The device of  claim 4 , wherein the controller is configured to instruct the moving mechanism to position the first opening of the hollow body proximate to the at least one feature to deliver the first solution selectively into the at least one feature. 
     
     
         6 . The device of  claim 1 , wherein the moving mechanism is configured to position the first opening of the hollow body proximate to the at least one feature to deliver the first solution selectively into the at least one feature. 
     
     
         7 . The device of  claim 6 , wherein a lateral geometry of the first opening of the hollow body is substantially similar to a lateral geometry of a top opening of the at least one feature. 
     
     
         8 . The device of  claim 7 , wherein a largest lateral dimension of the first opening of the hollow body is substantially equal to or smaller than a largest lateral dimension of the top opening of the at least one feature. 
     
     
         9 . The device of  claim 7 , wherein a largest lateral dimension of the first opening of the hollow body is substantially equal to or greater than a largest lateral dimension of the top opening of the at least one feature. 
     
     
         10 . The device of  claim 1 , further comprising another hollow body including a first opening and second opening, the another hollow body mechanically coupled to the moving mechanism. 
     
     
         11 . The device of  claim 10 , wherein the another hollow body comprises another electrode, wherein a potential difference is applicable between the another electrode and the surface of the wafer to electrodeposit the conductive material into the at least one feature. 
     
     
         12 . The device of  claim 10 , wherein the hollow body and the another hollow body are mechanically coupled to a hollow body selection mechanism. 
     
     
         13 . The device of  claim 1 , further comprising a solution delivery outlet configured to deliver a second solution onto the wafer. 
     
     
         14 . The device of  claim 13 , wherein the second solution comprises additives. 
     
     
         15 . The device of  claim 14 , wherein the additives comprise at least one of suppressors and accelerators. 
     
     
         16 . The device of  claim 1 , wherein the first solution is an electrolyte comprising copper. 
     
     
         17 . The device of  claim 1 , further comprising an electrode assembly disposed within the hollow body, the electrode assembly comprising a plurality of electrodes, the plurality of electrodes including the electrode, the potential difference applicable between the plurality of electrodes and the surface of the wafer to electrodeposit the conductive material into a plurality of features, and wherein the hollow body comprises a plurality of openings, the plurality of openings including the first opening. 
     
     
         18 . The device of  claim 17 , wherein the plurality of electrodes are formed by a process including masking. 
     
     
         19 . The device of  claim 17 , wherein at least one of an arrangement, a lateral geometry, and a largest lateral dimension of the plurality of electrodes is substantially similar to an arrangement, a lateral geometry, and a largest lateral dimension of the plurality of openings. 
     
     
         20 . The device of  claim 17 , wherein at least one of an arrangement, a lateral geometry, and a largest lateral dimension of the plurality of electrodes is substantially similar to an arrangement, a lateral geometry, and a largest lateral dimension of the plurality of features. 
     
     
         21 . The device of  claim 17 , wherein at least one of an arrangement, a lateral geometry, and a largest lateral dimension of the plurality of openings is substantially similar to an arrangement, a lateral geometry, and a largest lateral dimension of the plurality of features. 
     
     
         22 . A method of electrodepositing a conductive material into a 3-D via to form a conductive structure for 3-D integration, the method comprising:
 providing an electrodeposition device comprising:
 a first hollow body including a first opening and a second opening; 
 a first electrode disposed within the first hollow body; and 
 a moving mechanism mechanically coupled to the first hollow body; 
   holding a wafer with a wafer carrier, a surface of the wafer including at least one via;   operating the moving mechanism to position the first opening of the first hollow body proximate to a first via of the wafer surface;   supplying a solution to the second opening of the first hollow body;   flowing the solution out of the first opening of the first hollow body and into the first via; and   applying a potential difference between the first electrode and the surface of the wafer.   
     
     
         23 . A method of electrofilling a conductor into a deep feature formed on a surface of a wafer using an electrodeposition device having an opening, the method comprising:
 holding the wafer by a wafer carrier;   positioning the opening of the device over the deep feature; and   electrodepositing the conductor only into the deep feature without electrodepositing the conductor onto the surface of the wafer.   
     
     
         24 . The method of  claim 23 , further comprising flowing a solution comprising the conductor from the opening into the deep feature prior to electrodepositing. 
     
     
         25 . The method of  claim 24 , further comprising delivering another solution to the surface of the wafer while electrodepositing. 
     
     
         26 . The method of  claim 25 , wherein the another solution comprises additives. 
     
     
         27 . The method of  claim 26 , wherein the additives comprises accelerators and suppressors. 
     
     
         28 . The device of  claim 23 , wherein positioning the opening comprises placing the opening over the deep feature so as to selectively electrodeposit the conductor into the feature. 
     
     
         29 . The method of  claim 23 , wherein electrodepositing comprises applying a potential difference between surface of the wafer and an electrode of the electrodeposition device. 
     
     
         30 . The method of  claim 23 , wherein positioning the opening comprises moving the device by a moving mechanism. 
     
     
         31 . The method of  claim 23 , wherein the solution is an electrolyte comprising copper.