Semiconductor integrated circuit

Abstract

The present invention aims at offering the semiconductor integrated circuit which can perform reliable relief processing using an electric fuse. The present invention is provided with a fuse wiring, a first electrode pad, a second electrode pad, a pollution-control layer, and a first via hole wiring and a second via hole wiring. And a fuse wiring is cut by passing beyond a predetermined current value. A first electrode pad is connected to one side of a fuse wiring. A second electrode pad is connected to the other of a fuse wiring. A pollution-control layer is formed in the upper layer and the lower layer of a fuse wiring via an insulating layer. It is formed via an insulating layer to the side surface of a fuse wiring, it connects with a pollution-control layer, and the first via hole wiring of a pair surrounds a fuse wiring. To a fuse wiring, the second via hole wiring of a pair is formed in the outside of a first via hole wiring so that a first via hole wiring may be surrounded.

1 . A semiconductor integrated circuit, comprising:
 a fuse wiring cut by passing beyond a predetermined current value;   a first electrode pad connected to one side of the fuse wiring;   a second electrode pad connected to the other side of the fuse wiring;   a pollution-control layer formed in an upper layer and a lower layer of the fuse wiring via an insulating layer;   a first via hole wiring of a pair which is formed via the insulating layer to a side surface of the fuse wiring, connects with the pollution-control layer, and surrounds the fuse wiring; and   a second via hole wiring of a pair formed in an outside of the first via hole wiring to the fuse wiring so that the first via hole wiring may be surrounded.   
     
     
         2 . A semiconductor integrated circuit according to  claim 1 , wherein one end of the first via hole wiring is close to the first electrode pad, and the other end of the second via hole wiring is close to the second electrode pad. 
     
     
         3 . A semiconductor integrated circuit according to  claim 1 , wherein 400 nm or more of distance of the pollution-control layer and the first via hole wiring, and the fuse wiring is secured. 
     
     
         4 . A semiconductor integrated circuit according to  claim 1 , wherein between the pollution-control layer and the fuse wiring, two or more layers of fine layers are formed at least. 
     
     
         5 . A semiconductor integrated circuit according to  claim 1 , further comprising:
 a crack expansion prevention layer discontinuous in a wiring direction of the fuse wiring, the crack expansion prevention layer formed in an upper layer and a lower layer of the fuse wiring via the insulating layer between the fuse wiring and the pollution-control layer.   
     
     
         6 . A semiconductor integrated circuit, comprising:
 a fuse wiring cut by passing beyond a predetermined current value;   a first electrode pad connected to one side of the fuse wiring;   a second electrode pad connected to the other side of the fuse wiring; and   a crack expansion prevention layer discontinuous in a wiring direction of the fuse wiring, the crack expansion prevention layer formed in an upper layer and a lower layer of the fuse wiring via an insulating layer.   
     
     
         7 . A semiconductor integrated circuit according to  claim 6 , wherein 400 nm or more of distance of the crack expansion prevention layer and the fuse wiring is secured. 
     
     
         8 . A semiconductor integrated circuit according to  claim 6 , wherein between the crack expansion prevention layer and the fuse wiring, two or more layers of fine layers are formed at least. 
     
     
         9 . A semiconductor integrated circuit according to  claim 1 , further comprising:
 a plurality of first plugs electrically connected with the first electrode pad; and   a plurality of second plugs electrically connected with the second electrode pad;   wherein   a total of a contact cross section with the first electrode pad of the first plugs is the same as a total of a contact cross section with the second electrode pad of the second plugs.   
     
     
         10 . A semiconductor integrated circuit according to  claim 1 , further comprising:
 a plurality of first plugs electrically connected with the first electrode pad; and   a plurality of second plugs electrically connected with the second electrode pad;   wherein   a cross section of the second plug is the same as a cross section of the first plug, and a number of the second plug is the same as a number of the first plug.   
     
     
         11 . A semiconductor integrated circuit according to  claim 1 , wherein the fuse wiring is formed in a fine layer. 
     
     
         12 . A semiconductor integrated circuit according to  claim 1 , wherein the pollution-control layer has a portion electrically cut at least one place in a position corresponding to a fuse wiring which functions as an electric fuse.