Semiconductor apparatus and production method of the same

Abstract

In order to provide a semiconductor apparatus and a production method of the semiconductor apparatus that achieves a small interface trap density by implantation of fluorine and that achieves both small property fluctuation and a small leak current, a semiconductor apparatus includes: a semiconductor substrate; a well layer formed on the semiconductor substrate; a channel dope layer formed on the well layer; a source/drain diffused layer provided at an upper peripheral of the channel dope layer; gate electrodes formed on the channel dope layer via a gate insulation film; a polycrystalline silicon plug which is formed between the gate electrodes and which touches the source/drain diffused layer while piercing the gate insulation film; and fluorine which is selectively implanted only in a source area of the source/drain diffused layer.

1 . A semiconductor apparatus comprising:
 a semiconductor substrate;   a well layer formed on the semiconductor substrate;   a channel dope layer formed on the well layer;   a source/drain diffused layer provided at an upper peripheral of the channel dope layer;   gate electrodes formed on the channel dope layer via a gate insulation film;   a polycrystalline silicon plug which is formed between the gate electrodes and which touches the source/drain diffused layer while piercing the gate insulation film; and   fluorine which is selectively implanted only in a source area of the source/drain diffused layer.   
   
   
       2 . A semiconductor apparatus according to  claim 1 , wherein the fluorine is included in the source layer at a range from 1×10 18 /cm 3  to 1×10 22 /cm 3 . 
   
   
       3 . A semiconductor apparatus according to  claim 1 , wherein a dose amount of the fluorine is in a range from 1×10 14 /cm 2  to 1×10 17 /cm 2 . 
   
   
       4 . A semiconductor apparatus according to  claim 1 , wherein a dose amount of the fluorine is in a range from 1×10 15 /cm 2  to 1×10 16 /cm 2 . 
   
   
       5 . A semiconductor apparatus according to  claim 1 , wherein the fluorine is diffused from the source area to a silicon oxide film interface by conducting a heating operation after implanting the fluorine. 
   
   
       6 . A production method of a semiconductor apparatus comprising the steps of:
 forming a well layer on a semiconductor substrate;   forming a channel dope layer on the well layer;   forming a source/drain diffused layer at an upper peripheral of the channel dope layer;   forming gate electrodes on the channel dope layer via a gate insulation film;   forming a polycrystalline silicon plug which touches the source/drain diffused layer while piercing the gate insulation film, between the gate electrodes; and   selectively implanting fluorine only in a source area of the source/drain diffused layer.   
   
   
       7 . A production method of a semiconductor apparatus according to  claim 6 , wherein the fluorine is selectively implanted only in the source area by using a photoresist mask. 
   
   
       8 . A production method of a semiconductor apparatus according to  claim 6 , wherein the fluorine is included in the source layer at a range from 1×10 18 /cm 3  to 1×10 22 /cm 3  at the step of selectively implanting fluorine. 
   
   
       9 . A production method of a semiconductor apparatus according to  claim 6 , wherein a dose amount of the fluorine is in a range from 1×10 14 /cm 2  to 1×10 17 /cm 2  at the step of selectively implanting fluorine. 
   
   
       10 . A production method of a semiconductor apparatus according to  claim 6 , wherein a dose amount of the fluorine is in a range from 1×10 15 /cm 2  to 1×10 16 /cm 2  at the step of selectively implanting fluorine. 
   
   
       11 . A production method of a semiconductor apparatus according to  claim 6 , wherein the fluorine is implanted with an acceleration energy of 0.5-50 keV at the step of selectively implanting fluorine. 
   
   
       12 . A production method of a semiconductor apparatus according to  claim 6  further comprising a step of diffusing the fluorine form the source area to a silicon oxide film interface by heating at a temperature in a range from 600-1100° C. after the step of selectively implanting fluorine.