method of manufacturing a semiconductor device and a semiconductor device

Abstract

Wirings connected to a gate electrode of a slave switch circuit cell for substrate bias circuits are respectively electrically connected to a wiring for a power supply potential and a wiring for a reference potential. Thus, the switch operation of the slave switch circuit cell is made invalid. Wirings connected to n wells of respective circuit cells are electrically connected to a wiring for the power supply potential, and wirings connected to p wells of the respective circuit cells are electrically connected to the wiring. Thus, the n wells are fixed to the power supply potential, and the p wells are fixed to the reference potential.

1 . A semiconductor device comprising:
 (a) a plurality of circuit cells;   (b) a first wiring which supplies a first potential corresponding to a power supply potential to each of the plurality of circuit cells;   (c) a switch which performs switching between the supply and non-supply of the first potential to each of semiconductor substrate areas of the plural circuit cells;   (d) a second wiring which supplies a signal for controlling the operation of the switch;   (e) a third wiring which supplies the first potential or a third potential higher than the first potential to each of the semiconductor substrate areas of the plurality of circuit cells;   (f) a first circuit cell group corresponding to the plurality of circuit cells and that need not supply the third potential;   (g) the second wiring for the first circuit cell group;   (h) the third wiring for the first circuit cell group;   (i) a second circuit cell group corresponding to the plurality of circuit cells and that need the supply of the third potential;   (j) the second wiring for the second circuit cell group;   (k) the third wiring for the second circuit cell group; and   (l) a connecting portion which invalidates the function of the switch with respect to the first circuit cell group, and connects the second wiring and the third wiring for the first circuit cell group to the first wiring such that the potential supplied to each of the semiconductor substrate areas of the first circuit cell group is fixed to the power supply potential.   
   
   
       2 . A semiconductor device comprising:
 (a) a plurality of field effect transistors;   (b) a first wiring which supplies a first potential corresponding to a power supply potential to each of the plurality of field effect transistors;   (c) a switch which performs switching between the supply and non-supply of the first potential to each of semiconductor substrate areas of the plurality of field effect transistors;   (d) a second wiring which supplies a signal for controlling the operation of the switch;   (e) a third wiring which supplies the first potential or a third potential higher than the first potential to each of the semiconductor substrate areas of the plurality of field effect transistors;   (f) a first field effect transistor group corresponding to the plurality of field effect transistors and that need not supply the third potential;   (g) the second wiring for the first field effect transistor group;   (h) the third wiring for the first field effect transistor group;   (i) a second field effect transistor group corresponding to the plurality of field effect transistors and that need the supply of the third potential;   (j) the second wiring for the second field effect transistor group;   (k) the third wiring for the second field effect transistor group; and   (l) a connecting portion which invalidates the function of the switch with respect to the first field effect transistor group, and connects the second wiring and the third wiring for the first field effect transistor group to the first wiring such that the potential supplied to each of the semiconductor substrate areas of the first field effect transistor group is fixed to the power supply potential.   
   
   
       3 . A semiconductor device comprising:
 a plurality of circuit cells;   a first wiring which supplies a power supply potential to each of the plurality of circuit cells;   a power-feeding cell which supplies a first potential to each of semiconductor substrate areas of the plurality of circuit cells;   a second wiring which supplies a signal for controlling the operation of the power-feeding cell; and   a third wiring which supplies the first potential to each of the semiconductor substrate areas of the plurality of circuit cells,   wherein the function of the power-feeding cell electrically connects the second wiring and the third wiring to the first wiring such that the potential supplied to each of the semiconductor substrate areas of the plurality of circuit cells is fixed to the power supply potential.   
   
   
       4 . The semiconductor device according to  claim 3 , wherein the second wiring and the third wiring, and the first wiring are connected within an internal circuit area. 
   
   
       5 . The semiconductor device according to  claim 3 , wherein the second wiring and the third wiring, and the first wiring are connected within a peripheral circuit area. 
   
   
       6 . A semiconductor device comprising:
 a plurality of circuit cells;   a first wiring which supplies a power supply potential to each of the plurality of circuit cells;   a power-feeding cell which supplies a first potential to each of semiconductor substrate areas of the plurality of circuit cells;   a second wiring supplying a signal for controlling the operation of the power-feeding cell and having a portion intersecting the first wiring; and   a third wiring supplying the first potential, having a portion intersecting the first wiring, and connected to each of the semiconductor substrate areas of the plurality of circuit cells,   wherein the function of the power-feeding cell electrically connects the second wiring to the first wiring at the point intersecting the first wiring and electrically connects the third wiring to the first wiring at the point intersecting the first wiring such that the potential supplied to each of the semiconductor substrate areas of the plurality of circuit cells is fixed to the power supply potential.   
   
   
       7 . A semiconductor device comprising:
 an internal circuit area;   a plurality of circuit cells disposed in the internal circuit area;   a first wiring which supplies a power supply potential to each of the plurality of circuit cells;   a first power-feeding cell which supplies a first potential to each of semiconductor substrate areas of the plurality of circuit cells;   a plurality of input/output circuit cells disposed around the internal circuit area;   a second power-feeding cell disposed in each of the plurality of input/output circuit cells and for supplying a first potential to each of semiconductor substrate areas of the input/output circuit cells;   a second wiring which supplies a signal for controlling the operation of each of the first and second power-feeding cells; and   a third wiring which supplies the first potential, said third wiring being connected to each of the semiconductor substrate areas of the plurality of circuit cells and the plurality of input/output circuit cells,   wherein the functions of the first and second power-feeding cells electrically connect the second wiring and the third wiring to the first wiring such that the potential supplied to each of the semiconductor substrate areas of the plurality of circuit cells and the plurality of input/output circuit cells is fixed to the power supply potential.   
   
   
       8 . A semiconductor device comprising:
 a plurality of circuit cells;   a first wiring which supplies a power supply potential to each of the plurality of circuit cells;   a switch which performs switching between the supply and non-supply of a first potential to each of semiconductor substrate areas of the plurality of circuit cells;   a second wiring which supplies a signal for controlling the operation of the switch; and   a third wiring which supplies the first potential to each of the semiconductor substrate areas of the plurality of circuit cells,   wherein the second and third wirings are separated by a first circuit cell group that need not supply the first potential, of the plurality of circuit cells, and a second circuit cell group that needs the supply of the first potential, of the plurality of circuit cells,   wherein the function of the switch with respect to the first circuit cell group electrically connects the second wiring and the third wiring connected to the first circuit cell group to the first wiring such that the potential supplied to each of the semiconductor substrate areas of the first circuit cell group is fixed to the power supply potential.   
   
   
       9 . A semiconductor device comprising:
 a plurality of field effect transistors;   a first wiring which supplies a power supply potential to each of the plurality of field effect transistors;   a switch which performs switching between the supply and non-supply of a first potential to each of semiconductor substrate areas of the plurality of field effect transistors;   a second wiring which supplies a signal for controlling the operation of the switch; and   a third wiring which supplies the first potential to each of the semiconductor substrate areas of the plurality of field effect transistors,   wherein the second and third wirings are separated by a first field effect transistor group that need not supply the first potential, of the plurality of field effect transistors, and a second field effect transistor group that needs the supply of the first potential, of the plurality of field effect transistors,   wherein the function of the switch with respect to the first field effect transistor group is invalidated, and the second wiring and the third wiring connected to the first field effect transistor group are connected to the first wiring such that the potential supplied to each of the semiconductor substrate areas of the first field effect transistor group is fixed to the power supply potential.   
   
   
       10 . A semiconductor device comprising:
 a plurality of circuit cells;   a first wiring which supplies a power supply potential to each of the plurality of circuit cells;   a connecting cell which supplies a first potential to each of semiconductor substrate areas of the plurality of circuit cells;   a second wiring which supplies the first potential to the connecting cell; and   a third wiring which supplies the first potential to each of the semiconductor substrate areas of the plurality of circuit cells,   wherein the connecting cell connects the second wiring and the third wiring to the first wiring such that the potential supplied to each of the semiconductor substrate areas of the plurality of circuit cells is fixed to the power supply potential.   
   
   
       11 . A semiconductor device comprising:
 a plurality of circuit portions;   a plurality of power supply switches which are respectively connected to the plurality of circuit portions and respectively perform switching between the supply and non-supply of a power supply potential to the circuit portions; and   power supply switch control means which controls the operations of the plurality of power supply switches;   wherein a power supply switch connected to an always operation-desired circuit portion of the plurality of circuit portions is separated from the power supply switch control means, and   wherein an input of the power supply switch connected to the always operation-desired circuit portion is fixed to the power supply potential.