CMOS image sensor and method for fabricating the same

Abstract

A CMOS image sensor and a method for fabricating the same improve photosensitivity by imparting a color filter layer with the function of a microlens layer. The CMOS image sensor includes a semiconductor substrate; a plurality of photo-sensing elements formed in the semiconductor substrate; and a color filter layer comprised of a plurality of color filters for filtering light according to wavelength, wherein the plurality of color filters correspond to the plurality of photo-sensing elements and each color filter has a predetermined curvature for focusing light and for transmitting the focused light according to a corresponding wavelength.

1 . A CMOS image sensor comprising:
 a semiconductor substrate;   a plurality of photo-sensing elements formed in said semiconductor substrate; and   a color filter layer comprised of a plurality of color filters for filtering light according to wavelength, wherein the plurality of color filters correspond to said plurality of photo-sensing elements and each color filter has a predetermined curvature for focusing light and for transmitting the focused light according to a corresponding wavelength.   
   
   
       2 . A CMOS image sensor comprising:
 a microlens layer made of colored resist.   
   
   
       3 . The CMOS image sensor of  claim 1 , further comprising:
 an insulating interlayer covering said semiconductor substrate including said plurality of photo-sensing elements,   wherein said color filter layer is formed on said insulating interlayer.   
   
   
       4 . The CMOS image sensor of  claim 1 , wherein the color filters of said color filter layer are provided at fixed intervals. 
   
   
       5 . The CMOS image sensor of  claim 1 , wherein said color filter layer is planarized for receiving a lens layer. 
   
   
       6 - 12 . (canceled)