Adhesive Sheet and Method for Manufacturing the Same, Semiconductor Device Manufacturing Method and Semiconductor Device

Abstract

An adhesive sheet comprising a release substrate 10 , a substrate film 14 , and a first tacky-adhesive layer 12 placed between the release substrate 10 and the substrate film 14 , wherein an annular incision D is formed on the release substrate 10 from the surface of the first tacky-adhesive layer 12 side, the first tacky-adhesive layer 12 is laminated so as to cover the whole inner surface of the incision D in the release substrate 10 , and the incision D has a depth d of less than the thickness of the release substrate 10 and 25 μm or less.

1 . An adhesive sheet comprising a release substrate, a substrate film, and a first tacky-adhesive layer placed between the release substrate and the substrate film, wherein
 an annular incision is formed from the first tacky-adhesive layer side in the release substrate,   the first tacky-adhesive layer is laminated so as to cover the whole inner surface of the incision in the release substrate, and   the incision has a depth of less than the thickness of the release substrate and 25 μm or less.   
     
     
         2 . The adhesive sheet of  claim 1 , wherein a value of (d/a) satisfies the following formula (1):
   0<( d/a )≦0.7  (1)   
       wherein a (μm) is a thickness of the release substrate, and d (μm) is a depth of the incision. 
     
     
         3 . The adhesive sheet of  claim 1 , wherein the first tacky-adhesive layer has a plane shape which matches a plane shape of an adherend to which the first tacky-adhesive layer is stuck after the release substrate is peeled off. 
     
     
         4 . The adhesive sheet of  claim 1 , wherein the first tacky-adhesive layer has tackiness to the adhered to which the first tacky-adhesive layer is stuck and the substrate film at room temperature, after peeling off the release substrate. 
     
     
         5 . The adhesive sheet of  claim 1 , wherein the tack strength of the first tacky-adhesive layer to the substrate film is lowered by irradiation of a high energy beam. 
     
     
         6 . The adhesive sheet of  claim 1 , which further comprises a second tacky-adhesive layer placed between at least a part of a peripheral part of the first tacky-adhesive layer and the release substrate. 
     
     
         7 . The adhesive sheet of  claim 6 , wherein the second tacky-adhesive layer has tackiness to an adherend to which the second tacky-adhesive layer is stuck and the first tacky-adhesive layer at room temperature, after the release substrate is peeled off. 
     
     
         8 . The adhesive sheet of  claim 6 , which further comprises an intermediate layer placed between at least a part of the peripheral part of the first tacky-adhesive layer and the second tacky-adhesive layer. 
     
     
         9 . A method for producing an adhesive sheet including a release substrate, a substrate film and a first tacky-adhesive layer placed between the release substrate and the substrate film, comprising:
 a first laminating step in which the first tacky-adhesive layer and the substrate film are laminated on the release substrate; and   a first cutting step in which an incision is made from an opposite side of the first tacky-adhesive layer on the substrate film until it reaches the release substrate, after the first laminating step, to form an annular incision in the release substrate, wherein the incision is made in the first cutting step so as to have a depth of less than the thickness of the release substrate and 25 μm or less.   
     
     
         10 . The method for producing an adhesive sheet of  claim 9 , wherein the incision is made so that a value of (d/a) satisfies the following formula (1):
   0<( d/a )≦0.7  (1)   
       wherein a (μm) is a thickness of the release substrate, and d (μm) is a depth of the incision in the first cutting step. 
     
     
         11 . A method for producing an adhesive sheet including a release substrate, a substrate film, a first tacky-adhesive layer placed between the release substrate and the substrate film, and a second tacky-adhesive layer placed between the release substrate and the first tacky-adhesive layer, comprising:
 a second laminating step in which the second tacky-adhesive layer is partly laminated on the release substrate;   a third laminating step in which the first tacky-adhesive layer and the substrate film are laminated on the release substrate and the second tacky-adhesive layer; and   a second cutting step in which an incision is made from an opposite side of the first tacky-adhesive layer on the substrate film until it reaches the release substrate to form an annular incision in the release substrate, wherein   the cutting in the second cutting step is performed so that the second tacky-adhesive layer is placed between at least a part of the peripheral part of the first tacky-adhesive layer and the release substrate within the area of the inside of the incision, and the incision has a depth of less than the thickness of the release substrate and 25 μm or less.   
     
     
         12 . The method for producing an adhesive sheet of  claim 11 , wherein the incision is made so that a value of (d/a) satisfies the following formula (1):
   0<( d/a )≦0.7  (1)   
       wherein a (μm) is a thickness of the release substrate, and d (μm) is a depth of the incision in the second cutting step. 
     
     
         13 . A method for producing an adhesive sheet including a release substrate, a substrate film, a first tacky-adhesive layer placed between the release substrate and the substrate film, a second tacky-adhesive layer placed between the release substrate and the first tacky-adhesive layer, and an intermediate layer placed between the first tacky-adhesive layer and the second tacky-adhesive layer, comprising:
 a forth fourth laminating step in which the second tacky-adhesive layer and the intermediate layer are partly laminated on the release substrate;   a fifth laminating step in which the first tacky-adhesive layer and the substrate film are laminated on the release substrate and the intermediate layer; and   a third cutting step in which an incision is made from an opposite side of the first tacky-adhesive layer on the substrate film until it reaches the release substrate to form an annular incision in the release substrate, wherein   the cutting in the third cutting step is performed so that the second tacky-adhesive layer and the intermediate layer are placed between at least a part of the peripheral part of the first tacky-adhesive layer and the release substrate within the area of the inside of the incision, and the incision has a depth of less than the thickness of the release substrate and 25 μm or less.   
     
     
         14 . The method for producing an adhesive sheet of  claim 13 , wherein the incision is made so that a value of (d/a) satisfies the following formula (1):
   0<( d/a )≦0.7  (1)   
       wherein a (μm) is a thickness of the release substrate, and d (μm) is a depth of the incision in the third cutting step. 
     
     
         15 . A method for producing a semiconductor device comprising:
 a first peeling-off step in which the release substrate is peeled off from the adhesive sheet defined in  claim 1  to give a first laminate including the substrate film and the first tacky-adhesive layer;   a sticking step in which the first tacky-adhesive layer in the first laminate is stuck to a semiconductor wafer;   a first dicing step in which the semiconductor wafer and the first tacky-adhesive layer are subjected to dicing to give a semiconductor element to which the first tacky-adhesive layer is stuck;   a first picking-up step in which the semiconductor element to which the first tacky-adhesive layer adheres is picked up from the substrate film; and   a first bonding step in which the semiconductor element is bonded through the first tacky-adhesive layer to a support member for mounting a semiconductor element.   
     
     
         16 . The method for producing a semiconductor device of  claim 15 , wherein the picking-up is performed after a tack strength of the first tacky-adhesive layer to the substrate film is lowered by irradiating high energy beams to the first tacky-adhesive layer in the first picking-up step. 
     
     
         17 . A method for producing a semiconductor device comprising:
 a second peeling-off step in which the release substrate is peeled off from the adhesive sheet defined in  claim 6  to give a second laminate including the substrate film, the first tacky-adhesive layer and the second tacky-adhesive layer;   a second sticking step in which the first tacky-adhesive layer in the second laminate is stuck to a semiconductor wafer, and the second tacky-adhesive layer is stuck to a wafer ring;   a second dicing step in which the semiconductor wafer and the first tacky-adhesive layer are subjected to dicing to give a semiconductor element to which the first tacky-adhesive layer adheres;   a second picking-up step in which the semiconductor element to which the first tacky-adhesive layer adheres is picked-up from the substrate film; and   a second bonding step in which the semiconductor element is bonded through the first tacky-adhesive layer to a support member for mounting a semiconductor element.   
     
     
         18 . The method for producing a semiconductor device of  claim 17 , wherein the picking-up is performed after a tack strength of the first tacky-adhesive layer to the substrate film is lowered by irradiating high energy beams to the first tacky-adhesive layer in the second picking-up step. 
     
     
         19 . A method for producing a semiconductor device comprising:
 a third peeling-off step in which the release substrate is peeled off from the adhesive sheet defined in  claim 8  to give a third laminate including the substrate film, the first tacky-adhesive layer, the intermediate layer, and the second tacky-adhesive layer;   a third sticking step in which the first tacky-adhesive layer in the third laminate is stuck to a semiconductor wafer, and the second tacky-adhesive layer is stuck to a wafer ring;   a third dicing step in which the semiconductor wafer and the first tacky-adhesive layer are subjected to dicing to give a semiconductor element to which the first tacky-adhesive layer adheres;   a third picking-up step in which the semiconductor element to which the first tacky-adhesive layer adheres is picked-up from the substrate film; and   a third bonding step in which the semiconductor element is bonded through the first tacky-adhesive layer to a support member for mounting a semiconductor element.   
     
     
         20 . The method for producing a semiconductor device of  claim 19 , wherein the picking-up is performed after a tack strength of the first tacky-adhesive layer to the substrate film is lowered by irradiating high energy beams to the first tacky-adhesive layer in the third picking-up step. 
     
     
         21 . A semiconductor device which is produced according to the method for producing a semiconductor device of  claim 15 . 
     
     
         22 . An adhesive sheet comprising a release substrate, an adhesive layer, a tacky layer, and a substrate film, which are laminated in order, wherein
 the adhesive layer has a pre-determined first plane shape and is partly formed on the release substrate,   a first incision is formed from a side bringing contact with the adhesive layer along the periphery of the plane shape on the release substrate; and   the first incision has a depth of less than the thickness of the release substrate and 25 μm or less.   
     
     
         23 . The adhesive sheet of  claim 22 , wherein a value of (d 1 /a) satisfies the following formula (1):
   0<( d 1/ a )≦0.7  (1)   
       wherein a (μm) is a thickness of the release substrate, and d 1  (μm) is a depth of the first incision. 
     
     
         24 . The adhesive sheet of  claim 22 , wherein the tacky layer covers the adhesive layer and is laminated so as to bring contact with the release substrate around the adhesive layer. 
     
     
         25 . The adhesive sheet of  claim 24 , wherein the tacky layer and the substrate film have pre-determined second plane shapes and are partly formed on the release substrate,
 a second incision is formed from a side bringing contact with the tacky layer along the periphery of the second plane shape on the release substrate; and   the second incision has a depth of less than the thickness of the release substrate and 25 μm or less.   
     
     
         26 . The adhesive sheet of  claim 25 , wherein a value of (d 2 /a) satisfies the following formula (2):
   0<( d 2/ a )≦0.7  (2)   
       wherein a (μm) is a thickness of the release substrate, and d 2  (μm) is a depth of the second incision. 
     
     
         27 . The adhesive sheet of  claim 22 , wherein the adhesive layer has a plane shape which matches a plane shape of an adherend to which the adhesive layer is stuck after the release substrate is peeled off. 
     
     
         28 . The adhesive sheet of  claim 22 , wherein the tacky layer has tack strength to the adherend to which the tacky layer is stuck and the adhesive layer at room temperature after the release substrate is peeled off. 
     
     
         29 . The adhesive sheet of  claim 22 , wherein the tacky layer has tack strength to the adhesive layer, which is lowered by irradiating high energy beams. 
     
     
         30 . A method for producing an adhesive sheet including a release substrate, an adhesive layer, a tacky layer and a substrate film, which are laminated in order, comprising
 a first laminating step in which the adhesive layer, the tacky layer, and the substrate film are laminated in order on the release substrate; and   a first cutting step in which an incision is made from an opposite side bringing contact with the tacky layer on the substrate film until it reaches the release substrate to cut the adhesive layer, the tacky layer and the substrate film in pre-determined plane shapes and to form a first incision in the release substrate; wherein   the incision is made so that the first incision has a depth of less than the thickness of the release substrate and 25 μm or less in the first cutting step.   
     
     
         31 . The method for producing an adhesive sheet of  claim 30 , wherein the incision is made so that a value of (d 1 /a) satisfies the following formula (1):
   0<( d 1/ a )≦0.7  (1)   
       wherein a (μm) is a thickness of the release substrate, and d 1  (μm) is a depth of the first incision in the first cutting step. 
     
     
         32 . A method for producing an adhesive sheet including a release substrate, an adhesive layer, a tacky layer, and substrate film, which are laminated in order, comprising:
 a second laminating step in which the adhesive layer is laminated on the release substrate;   a second cutting step in which an incision is made from an opposite side bringing contact with the release substrate on the adhesive layer until it reaches the release substrate to cut the adhesive layer in a pre-determined plane shape and to form a first incision in the release substrate; and   a third laminating step in which the tacky layer, and the substrate film are laminated in order on the adhesive layer, wherein   the incision is made so that the first incision has a depth of less than the thickness of the release substrate and 25 μm or less in the second cutting step.   
     
     
         33 . The method for producing an adhesive sheet of  claim 32 , wherein the incision is made so that a value of (d 1 /a) satisfies the following formula (1):
   0<( d 1/ a )≦0.7  (1)   
       wherein a (μm) is a thickness of the release substrate, and d 1  (μm) is a depth of the first incision in the second cutting step. 
     
     
         34 . The method for producing an adhesive sheet of  claim 33 , wherein the tacky layer covers the adhesive layer, and the tacky layer and the substrate film are laminated so as to bring contact with the release substrate around the adhesive layer in the third laminating step;
 which further comprises a third cutting step in which an incision is made from an opposite side bringing contact with the tacky layer on the substrate film until it reaches the release substrate to cut the substrate film and the tacky layer in a pre-determined plane shapes and to form a second incision in the release substrate, the second incision in the third cutting step being made so as to have a depth less than the thickness of the release substrate and 25 μm or less.   
     
     
         35 . The method for producing an adhesive sheet of  claim 34 , wherein the incision is made so that a value of (d 2 /a) satisfies the following formula (2):
   0<( d 1/ a )≦0.7  (2)   
       wherein a (μm) is a thickness of the release substrate, and d 2  (μm) is a depth of the second incision in the third cutting step. 
     
     
         36 . A method for producing a semiconductor device comprising:
 a sticking step in which a laminate including the adhesive layer, the tacky layer and the substrate film in the adhesive sheet of  claim 22 , is peeled off from the release substrate, and the laminate is stuck through the adhesive layer to a semiconductor wafer to give a semiconductor wafer having the laminate;   a dicing step in which the semiconductor wafer having the laminate is subjected to dicing to give a semiconductor element having a laminate with a pre-determined size;   a peeling-off step in which the tacky layer on the laminate is irradiated with high energy beams to lower the tack strength of the tacky layer to the adhesive layer, and then the tacky layer and the substrate film are peeled off from the adhesive layer to give a semiconductor element having the adhesive layer; and   a bonding step in which the semiconductor element having the adhesive layer is bonded through the adhesive layer to a support member for mounting a semiconductor element.   
     
     
         37 . A semiconductor device which is produced according to the method for producing a semiconductor device of  claim 36 . 
     
     
         38 . A semiconductor device which is produced according to the method for producing a semiconductor device of  claim 17 . 
     
     
         39 . A semiconductor device which is produced according to the method for producing a semiconductor device of  claim 19 .