Plasma processing apparatus

Abstract

There is provided a plasma processing apparatus including: a chamber; an insulating plate provided in an upper region in the chamber; a ground electrode provided on a sidewall of the chamber and supplied with a ground voltage; and a lower electrode provided in a lower region in the chamber on which a substrate is seated, wherein the lower electrode comprises a plurality of electrodes, and an RF voltage and the ground voltage are alternately supplied to the adjacent two electrodes, respectively.

1 . A plasma processing apparatus comprising:
 a chamber;   an insulating plate provided in an upper region in the chamber;   a ground electrode provided on a sidewall of the chamber and supplied with a ground voltage; and   a lower electrode provided in a lower region in the chamber on which a substrate is seated,   wherein the lower electrode comprises a plurality of electrodes, and an RF voltage and the ground voltage are alternately supplied to the adjacent two electrodes, respectively.   
   
   
       2 . The plasma processing apparatus of  claim 1 , wherein the electrode(s) to which the RF voltage is supplied is fixed, and the other electrode(s) is driven to move up and down. 
   
   
       3 . The plasma processing apparatus of  claim 1 , wherein the electrode(s) to which the ground voltage is supplied is fixed, and the other electrode(s) is driven to move up and down. 
   
   
       4 . The plasma processing apparatus of  claim 1 , wherein the electrodes of the lower electrode are concentric and spaced apart from each other by a predetermined distance. 
   
   
       5 . The plasma processing apparatus of  claim 4 , wherein the electrodes of the lower electrode comprise first, second and third electrodes arranged from the center toward the periphery of the substrate, the diameter of the first electrode is approximately 35 to 55% of the diameter of the third electrode, and the diameter of the second electrode is approximately 56 to 75% of the diameter of the third electrode. 
   
   
       6 . The plasma processing apparatus of  claim 4 , wherein the electrodes of the lower electrode comprise first, second, third and fourth electrodes arranged from the center toward the periphery of the substrate, the diameter of the first electrode is approximately 35 to 45% of the diameter of the fourth electrode, the diameter of the second electrode is approximately 46 to 60% of the diameter of the fourth electrode, and the diameter of the third electrode is approximately 61 to 75% of the diameter of the fourth electrode. 
   
   
       7 . The plasma processing apparatus of  claim 4 , wherein the electrodes of the lower electrode comprise first, second, third, fourth and fifth electrodes arranged from the center toward the periphery of the substrate, the diameter of the first electrode is approximately 30 to 40% of the diameter of the fifth electrode, the diameter of the second electrode is approximately 41 to 50% of the diameter of the fifth electrode, the diameter of the third electrode is approximately 51 to 60% of the diameter of the fifth electrode, and the diameter of the fourth electrode is approximately 61 to 75% of the diameter of the fifth electrode 
   
   
       8 . The plasma processing apparatus of  claim 1 , further comprising a substrate sensor provided on the chamber to sense the substrate,
 wherein at least one guide hole is formed in the insulating plate to guide light output from the substrate sensor toward the substrate.