Apparatus for pulling single crystal by CZ method

Abstract

In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

1 - 38 . (canceled) 
   
   
       39 . A method of pulling a silicon single crystal by use of a Czochralski (CZ) method, wherein a pulling rate at which a silicon single crystal is to be pulled by use of the CZ method is increased by means of selecting one or more factors from the group consisting of adjustment of a hot zone, disposition and adjustment of a thermal shield member, adjustment of a distance between the bottom of the thermal shield member and a melt surface, disposition and adjustment of a cooler, and application and adjustment of a magnetic field. 
   
   
       40 . A silicon ingot for high-speed production of wafers which is produced according to the method as defined in  claim 39 . 
   
   
       41 . A wafer for epitaxial growth or annealing purpose which is sliced off from the silicon ingot described in  claim 40 . 
   
   
       42 . A method of optimizing a pulling rate at which a silicon single crystal is to be pulled according to the CZ method, by means of selecting one or more factors from the group consisting of adjustment of a hot zone, disposition and adjustment of a thermal shield member, adjustment of a distance between the bottom of the thermal shield member and a melt surface, disposition and adjustment of a cooler, application and adjustment of a magnetic field, and adjustment of doping level of nitrogen. 
   
   
       43 . A computer-readable storage medium having stored thereon two or more data sets which are selected from the group consisting of adjustment of a hot zone, disposition and adjustment of a thermal shield member, adjustment of a distance between the bottom of the thermal shield member and a melt surface, disposition and adjustment of a cooler, and application and adjustment of a magnetic field, at the time of pulling a silicon single crystal by use of a Czochralski (CZ) method. 
   
   
       44 . A program for increasing a pulling rate at which a silicon single crystal is to be pulled according to the CZ method, wherein a computer-readable storage medium has stored thereon one or more programs which are selected from the group consisting of adjustment of a hot zone, disposition and adjustment of a thermal shield member, adjustment of a distance between the bottom of the thermal shield member and a melt surface, adjustment of a cooler, and application and adjustment of a magnetic field. 
   
   
       45 . A silicon single crystal puller having stored therein the computer-readable storage medium of  claim 43 . 
   
   
       46 . A silicon single crystal puller having stored thereon the storage medium from the program of  claim 44 .