Chip Scale Package For A Micro Component

Abstract

A package includes a sensor die with a micro component, such as a MEMS device, coupled to an integrated circuit which may include, for example, CMOS circuitry, and one or more electrically conductive bond pads near the periphery of the sensor die. A semiconductor cap structure is attached to the sensor die. The front side of the cap structure is attached to the sensor die by a seal ring to hermetically encapsulate an area of the sensor die where the micro component is located. The bond pads on the sensor die are located outside the area encapsulated by the seal ring. Electrical leads, which extend along outer side edges of the semiconductor cap structure from its front side to its back side, are coupled to the micro component via the bond pads.

1 . A package comprising:
 a sensor die including a micro component coupled to an integrated circuit, and one or more electrically conductive bond pads near the periphery of the sensor die;   a semiconductor cap structure attached to the sensor die, wherein a front side of the cap structure is attached to the sensor die by a seal ring to hermetically encapsulate an area of the sensor die where the micro component is located, and wherein the bond pads on the sensor die are outside the area encapsulated by the seal ring; and   electrical leads coupled to the micro component via the bond pads, wherein the electrical leads extend along outer side edges of the semiconductor cap structure from its front side to its back side.   
     
     
         2 . The package of  claim 1  wherein the micro component comprises a MEMS device, and the integrated circuit comprises CMOS circuitry. 
     
     
         3 . The package of  claim 1  wherein said outer side edges of the cap structure are sloped. 
     
     
         4 . The package of  claim 1  wherein the electrical leads are coupled to electrically conductive pads on the back side of the cap structure, and wherein the electrically conductive pads on the back side of the cap structure are adapted for surface mounting on a printed circuit board. 
     
     
         5 . A package for an integrated circuit sensor comprising:
 a sensor die including a micro component, an integrated circuit, and one or more electrically conductive bond pads near the periphery of the sensor die; and   a semiconductor cap structure attached to the sensor die, wherein the semiconductor cap structure has a front side facing the sensor die and a back side,   wherein the front side of the cap structure is attached to the sensor die by a seal ring to hermetically encapsulate an area of the sensor die where the micro component is located, and   wherein electrically conductive pads on the front side of the cap structure are connected to the one or more bond pads on the sensor die,   the cap structure having side edges with electrical leads that extend to the back side of the cap structure, wherein the electrical leads are connected to the conductive pads on the front side of the cap structure.   
     
     
         6 . The package of  claim 5  wherein the micro component comprises a MEMS device, and the integrated circuit comprises CMOS circuitry. 
     
     
         7 . The package of  claim 5  wherein the bond pads on the sensor die are outside the area encapsulated by the seal ring. 
     
     
         8 . The package of  claim 5  wherein the seal ring comprises a solder seal ring, and the electrically conductive pads on the front side of the cap structure comprise landing pads. 
     
     
         9 . The package of  claim 5  wherein the side edges of the cap structure having the electrical leads are sloped. 
     
     
         10 . The package of  claim 5  wherein the electrical leads are coupled to electrically conductive pads on the back side of the cap structure. 
     
     
         11 . The package of  claim 10  wherein the electrically conductive pads on the back side of the cap structure are adapted for surface mounting on a printed circuit board. 
     
     
         12 . The package of  claim 5  wherein the semiconductor cap structure comprises silicon. 
     
     
         13 . The package of  claim 5  wherein the micro component is located in an area at about the center of a surface of the die. 
     
     
         14 . The package of  claim 5  wherein the front side of the cap structure includes a cavity opposite the micro component. 
     
     
         15 . The package of  claim 5  wherein:
 the front side of the cap structure includes a cavity opposite the micro component;   the bond pads on the sensor die are outside the area encapsulated by the seal ring, the seal ring comprises a solder seal ring,   the electrically conductive pads on the front side of the cap structure comprise landing pads,   the side edges of the cap structure having the electrical leads are sloped, and   the electrical leads are coupled to electrically conductive pads on the back side of the cap structure.   
     
     
         16 . The package of  claim 15  wherein the micro component comprises a MEMS device. 
     
     
         17 . The package of  claim 16  wherein the integrated circuit comprises CMOS circuitry. 
     
     
         18 - 23 . (canceled)