Semiconductor device and method for manufacturing the same

Abstract

At least a laminate of a gate insulating film 6 and a gate electrode 7 and an active region 13 are formed on a silicon substrate 1 , and an underlying interlayer insulating film 10 is further formed. Then, a conductor 11 a connected to the gate electrode 7 , and a conductor 11 b that is a dummy conductor and is connected to the active region 13 are formed simultaneously on the underlying interlayer insulating film 10 . Thereafter, an interlayer insulating film 12 is formed on the underlying interlayer insulating film 10 by a plasma process. At this time, charging current from a plasma 14 is emitted through the conductor 11 b , which is a dummy conductor.

1 - 15 . (canceled) 
   
   
       16 . A semiconductor device comprising a semiconductor substrate, a gate insulating film provided on the semiconductor substrate, a gate electrode provided on the gate insulating film, an insulating layer covering the gate insulating film and the gate electrode, and a conductor provided in the insulating layer,
 wherein an active region that serves as a diode is formed on the semiconductor substrate,   the conductor has at least a dummy conductor, and a non-dummy conductor connected electrically to the gate electrode or the active region, and   the dummy conductor is provided so as not to be overlapped with a region obtained by projecting the active region on the insulating layer along the normal direction of the semiconductor substrate.   
   
   
       17 . The semiconductor device according to  claim 16 , wherein the dummy conductor and the non-dummy conductor are formed simultaneously by a damascene method and embedded in the insulating layer. 
   
   
       18 . The semiconductor device according to  claim 17 , wherein the dummy conductor and the non-dummy conductor are formed of a same metal material. 
   
   
       19 . The semiconductor device according to  claim 18 , wherein the metal material is a metal material containing copper. 
   
   
       20 - 29 . (canceled)