Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission

Abstract

A method in a plasma processing system of determining the temperature of a substrate. The method includes providing a substrate comprising a set of materials, wherein the substrate being configured to absorb electromagnetic radiation comprising a first set of electromagnetic frequencies, to convert the first set of electromagnetic frequencies to a set of thermal vibrations, and to transmit a second set of electromagnetic frequencies. The method also includes positioning the substrate on a substrate support structure, wherein the substrate support structure includes a chuck; flowing an etchant gas mixture into a plasma reactor of the plasma processing system; and striking the etchant gas mixture to create a plasma, wherein the plasma comprises the first set of electromagnetic frequencies. The method further includes processing the substrate with the plasma thereby generating the second set of electromagnetic frequencies; calculating a magnitude of the second set of electromagnetic frequencies; and converting the magnitude to a temperature value.

1 - 27 . (canceled) 
     
     
         28 . An apparatus for determining a temperature of a substrate in a plasma processing system, said plasma processing system configured to process said substrate using a plasma, the apparatus comprising:
 a detector for measuring a magnitude of emitted phonon-generated radiation of a select signal, said select signal having a select frequency that corresponds to a frequency predetermined in advance based on material composition of said substrate to be strongly absorbed by said substrate, said substrate positioned between said plasma and said detector such that said detector is protected from said plasma; and   a means for converting said magnitude of said emitted phonon-generated radiation of said select signal to a temperature value of said temperature.   
     
     
         29 . The apparatus of  claim 28 , wherein said plasma processing system further includes an electromagnetic radiation measuring device. 
     
     
         30 . The apparatus of  claim 28 , wherein said substrate is positioned between said plasma and said electromagnetic radiation measuring device. 
     
     
         31 . The apparatus of  claim 28 , wherein said means for converting said magnitude of said emitted phonon-generated radiation of said select signal to a said temperature value of said temperature is configured to use Plank's radiation law for blackbody radiation. 
     
     
         32 . The apparatus of  claim 28 , wherein said detector includes at least an electromagnetic measuring device. 
     
     
         33 . The apparatus of  claim 32 , where said electromagnetic measuring device comprises a narrow-band pyrometer. 
     
     
         34 . The apparatus of  claim 32 , where said electromagnetic measuring device comprises a monochrometer. 
     
     
         35 . The apparatus of  claim 32 , where said electromagnetic measuring device comprises a grating. 
     
     
         36 . The apparatus of  claim 32 , where said electromagnetic measuring device comprises a band pass optical filter. 
     
     
         37 . The apparatus of  claim 28 , wherein said plasma processing system further includes a cooling system, and said cooling system is adjusted to maintain said temperature value substantially constant. 
     
     
         38 . The apparatus of  claim 28 , wherein said substrate is a wafer. 
     
     
         39 . The apparatus of  claim 28 , % herein said substrate is a glass panel. 
     
     
         40 . The apparatus of  claim 28 , wherein said plasma is associated with a first set of electromagnetic frequencies, and said first set of electromagnetic frequencies comprise the Infrared spectrum. 
     
     
         41 . The apparatus of  claim 28 , wherein said emitted phonon-generated radiation is associated with a first set of electromagnetic frequencies and said second set of electromagnetic frequencies comprise the Infrared spectrum. 
     
     
         42 - 55 . (canceled) 
     
     
         56 . The apparatus of  claim 28 , wherein said plasma processing system includes a substrate support structure for supporting said substrate, and said detector is disposed inside said substrate support structure such that said substrate is protected from contaminants produced by said detector. 
     
     
         57 . A plasma processing system for processing a substrate using a plasma, the plasma processing system comprising:
 a substrate support structure for supporting said substrate;   a detector for measuring a magnitude of emitted phonon-generated radiation of a select signal, said select signal having a select frequency that corresponds to a frequency predetermined in advance based on material composition of said substrate to be strongly absorbed by said substrate, said substrate positioned between said plasma and said detector such that said detector is protected from said plasma; and   a means of for converting said magnitude of said emitted phonon-generated radiation of said select signal to a temperature value of a temperature of said substrate.   
     
     
         58 . The plasma processing system of  claim 57 , wherein said detector is disposed inside said substrate support structure such that said substrate is protected from contaminants produced by said detector. 
     
     
         59 . The plasma processing system of  claim 57 , further comprising a cooling system, said cooling system configured to maintain said temperature value substantially constant. 
     
     
         60 . The plasma processing system of  claim 57 , wherein said detector includes at least an electromagnetic measuring device. 
     
     
         61 . The plasma processing system of  claim 57 , wherein said emitted phonon-generated radiation is associated with a first set of electromagnetic frequencies, and said second set of electromagnetic frequencies comprise the Infrared spectrum.