Revolution member supporting apparatus and semiconductor substrate processing apparatus

Abstract

A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of rotation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member. The holding members revolve around the axis of rotation when the rotatable member rotates and are allowed to swing about their own central axes.

1 . A semiconductor substrate processing apparatus, comprising:
 a carry-in and carry-out section for carrying in and carrying out a semiconductor substrate having a surface on which a circuit is formed, in a dry state;   a plated metal film forming unit for forming a plated metal film on said semiconductor substrate which has been carried in;   a cleaning unit for cleaning said semiconductor substrate held by a revolution member supporting apparatus; and   a transfer mechanism for transferring said semiconductor substrate between said units;   wherein said revolution member supporting apparatus comprises:   a rotatable member which rotates about an axis of rotation; and   a plurality of holding members which are disposed along a circle having a center corresponding to said axis of rotation of said rotatable member, and which revolve around said axis of rotation when said rotatable member rotates;   wherein said holding members are allowed to rotate about their own central axes.   
     
     
         2 . The semiconductor substrate processing apparatus according to  claim 1 , further comprising a polishing unit for polishing at least part of said plated metal film on said semiconductor substrate. 
     
     
         3 . The semiconductor substrate processing apparatus according to  claim 1 , further comprising a reinforcing seed layer forming unit for forming a reinforcing seed layer on said semiconductor substrate. 
     
     
         4 . The semiconductor substrate processing apparatus according to  claim 1 , further comprising a seed layer forming unit for forming a seed layer on said semiconductor substrate. 
     
     
         5 . The semiconductor substrate processing apparatus according to  claim 1 , further comprising a barrier layer forming unit for forming a barrier layer on said semiconductor substrate. 
     
     
         6 . The semiconductor substrate processing apparatus according to  claim 1 , further comprising a cap plating unit for forming a plated cap layer on said semiconductor substrate. 
     
     
         7 . The semiconductor substrate processing apparatus according to  claim 1 , further comprising a bevel etching unit for etching and removing at least one of said plated metal film, a seed layer and a barrier layer formed at a peripheral edge portion of said semiconductor substrate. 
     
     
         8 . The semiconductor substrate processing apparatus according to  claim 1 , further comprising at least one of a film thickness measuring instrument for measuring a thickness of a film formed on said semiconductor substrate and a detection sensor for detecting a surface state of a film formed on said semiconductor substrate. 
     
     
         9 . The semiconductor substrate processing apparatus according to  claim 1 , wherein each of said units is interchangeable. 
     
     
         10 . The semiconductor substrate processing apparatus according to  claim 1 , wherein in said plated metal film forming unit, plating treatment and cleaning treatment are performed in such a state that said semiconductor substrate is held by a substrate holding portion. 
     
     
         11 . The semiconductor substrate processing apparatus according to  claim 1 , further comprising an annealing unit for annealing said semiconductor substrate.