Phase change memory devices and fabrication methods thereof

Abstract

In a memory device, at least one conductive contact having a width of less than, or equal to, about 30 nm may be formed on a first electrode. A dielectric layer may be formed on the sides of the at least one conductive contact, and a phase change material film may be formed on the conductive contact. A second electrode may be formed on the phase change material.

1 . A memory device comprising:
 a first electrode;   at least one conductive contact formed on the first electrode and having a width of less than, or equal to, about 30 nm;   a dielectric layer formed on the sides of the at least one conductive contact;   a phase change material film formed on the conductive contact;   a second electrode formed on the phase change material film; and   a transistor electrically connected to the first electrode.   
   
   
       2 . The device of  claim 1 , further including
 a phase change catalyst formed between the sides of the conductive contact and the dielectric layer, such that the phase change catalyst contacts the phase change material film.   
   
   
       3 . The device of  claim 2 , wherein the phase change catalyst includes one of ZnS, ZnS+SiO 2 , and Al 2 O 3 . 
   
   
       4 . The memory device of  claim 1 , wherein the first electrode, the second electrode and the conductive contact are comprised of materials including at least Ti. 
   
   
       5 . The memory device of  claim 1 , wherein the dielectric layer includes one of Si 3 N 4  and TEOS oxide or the phase change material film is formed to have a thickness of about 1000 Å. 
   
   
       6 - 20 . (canceled)