Inventor · disambiguated record
Dong-Seok Suh
Also filed as: SUH DONG-SEOK
34 granted patents·10 pending applications·204 citations·filing 2005–2023
97Inventor score
Top patents by PatentIndex Score
44 records- 0195US8101061B2Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final statesSUH DONG-SEOK·Filed 2005·Granted Jan 24, 2012·26 cites·27 claims
- 0293US7705343B2Phase change random access memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 27, 2010·31 cites·29 claims
- 0390US7521704B2Memory device using multi-layer with a graded resistance changeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·20 cites·13 claims
- 0488US7897030B2Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final statesUNIV TEXAS·Filed 2006·Granted Mar 1, 2011·11 cites·6 claims
- 0586US8085583B2Vertical string phase change random access memory deviceSUH DONG-SEOK·Filed 2009·Granted Dec 27, 2011·12 cites·19 claims
- 0680US7696507B2Storage nodes, phase change memory devices, and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 13, 2010·9 cites·26 claims
- 0780US7558105B2Phase change memory devices and multi-bit operating methods for the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 7, 2009·12 cites·20 claims
- 0879US8471232B2Resistive memory devices including vertical transistor arrays and related fabrication methodsKIM DEOK-KEE·Filed 2010·Granted Jun 25, 2013·6 cites·20 claims
- 0978US9046358B2Sensor, method of operating the same, and system including the sameLEE TAE YON·Filed 2010·Granted Jun 2, 2015·4 cites·20 claims
- 1077US8937711B2Sensor and method using the sameKIM SUK PIL·Filed 2011·Granted Jan 20, 2015·6 cites·19 claims
- 1177US8021524B2Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final statesUNIV TEXAS·Filed 2006·Granted Sep 20, 2011·5 cites·25 claims
- 1276US8144507B2Method of measuring a resistance of a resistive memory deviceKIM YOUNG-KUK·Filed 2010·Granted Mar 27, 2012·4 cites·9 claims
- 1373US8080149B2Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final statesSUH DONG-SEOK·Filed 2006·Granted Dec 20, 2011·4 cites·6 claims
- 1471US7541633B2Phase-change RAM and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 2, 2009·4 cites·16 claims
- 1570US8742514B2Storage node, phase change memory device and methods of operating and fabricating the sameSUH DONG-SEOK·Filed 2012·Granted Jun 3, 2014·2 cites·13 claims
- 1670US8083909B2Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final statesSUH DONG-SEOK·Filed 2006·Granted Dec 27, 2011·3 cites·7 claims
- 1770US8017929B2Phase change material layers and phase change memory devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 13, 2011·5 cites·15 claims
- 1867US7872908B2Phase change memory devices and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 18, 2011·7 cites·12 claims
- 1966US8049202B2Phase change memory device having phase change material layer containing phase change nano particlesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 1, 2011·7 cites·8 claims
- 2066US7476892B2Storage node, phase change memory device and methods of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 13, 2009·2 cites·16 claims
- 2165US8066855B2Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final statesSUH DONG-SEOK·Filed 2006·Granted Nov 29, 2011·2 cites·13 claims
- 2265US7626859B2Phase-change random access memory and programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 1, 2009·5 cites·13 claims
- 2364US7737527B2Phase change material containing carbon, memory device including the phase change material, and method of operating the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 15, 2010·2 cites·19 claims
- 2462US7599216B2Phase change memory devices and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 6, 2009·6 cites·9 claims
- 2561US7872250B2Phase-change ram and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 18, 2011·1 cites·17 claims
- 2658US8218359B2Phase change random access memory and methods of manufacturing and operating sameSUH DONG-SEOK·Filed 2009·Granted Jul 10, 2012·1 cites·6 claims
- 2757US7642540B2Phase change random access memory and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 5, 2010·3 cites·12 claims
- 2856US8120004B2Storage node, phase change memory device and methods of operating and fabricating the sameSUH DONG-SEOK·Filed 2008·Granted Feb 21, 2012·0 cites·14 claims
- 2954US7763886B2Doped phase change material and pram including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 27, 2010·0 cites·10 claims
- 3054US2012132804A1Thermal image sensor with chalcogenide material and method of fabricating the sameLEE TAE-YON·Filed 2011·Application pending·0 cites
- 3153US2024118071A1Strain sensor, method of manufacturing strain sensor, and strain measuring method using strain sensorHYUNDAI MOTOR CO LTD·Filed 2023·Application pending·0 cites
- 3252US2011214736A1Photodiode, image sensor and solar cellLEE TAE-YON·Filed 2011·Application pending·0 cites
- 3351US7824953B2Method of operating and structure of phase change random access memory (PRAM)SAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 2, 2010·2 cites·9 claims
- 3448US2009039338A1Phase change memory devices and fabrication methods thereofSUH DONG-SEOK·Filed 2008·Application pending·0 cites
- 3547US8319291B2Non-volatile memory device with data storage layerKIM DEOK-KEE·Filed 2009·Granted Nov 27, 2012·1 cites·12 claims
- 3647US7956342B2Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impuritiesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 7, 2011·1 cites·14 claims
- 3746US2010019220A1Phase change random access memory device, method of fabricating the same, and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3845US7449360B2Phase change memory devices and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 11, 2008·0 cites·12 claims
- 3941US2009279352A1Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the sameNOH JIN-SEO·Filed 2009·Application pending·0 cites
- 4039US8054672B2Non-volatile memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 8, 2011·0 cites·11 claims
- 4139US2008023686A1Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the sameNOH JIN-SEO·Filed 2007·Application pending·0 cites
- 4236US2012147658A1System of measuring a resistance of a resistive memory deviceKIM YOUNG-KUK·Filed 2012·Application pending·0 cites
- 4336US2008013363A1Operation method of nonvolatile memory device induced by pulse voltageSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4423US2006121391A1Phase change memory device having phase change material layer containing phase change nano particles and method of fabricating the sameKHANG YOON-HO·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →